MGP11N60E中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
MGP11N60E規(guī)格書詳情
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an Energy–efficient, ESD protected, and short circuit rugged device.
? Industry Standard TO–220 Package
? High Speed: Eoff = 60 μJ/A typical at 125°C
? High Voltage Short Circuit Capability – 10 μs minimum at 125°C, 400 V
? Low On–Voltage 2.0 V typical at 8.0 A, 125°C
? Robust High Voltage Termination
? ESD Protection Gate–Emitter Zener Diodes
產(chǎn)品屬性
- 型號：
MGP11N60E
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
TO-220 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
ON/安森美 |
21+ |
NA |
12820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
ON |
1822+ |
TO-220 |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
ON/安森美 |
23+ |
NA |
25630 |
原裝正品 |
詢價 | ||
ON/安森美 |
22+ |
N/A |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
ON |
24+ |
90000 |
詢價 | ||||
Infineon/英飛凌 |
22+ |
TO-220 |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
INFINEON |
25+ |
TO-TO-220 |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
ON |
23+ |
TO-220 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
Infineon/英飛凌 |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價 |
