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MGFK35V2732中文資料三菱電機數(shù)據(jù)手冊PDF規(guī)格書
MGFK35V2732規(guī)格書詳情
DESCRIPTION
The MGFK35V2732 is an internally impedance matched GaAs power FET especially designed for use in 12.7 ~ 13.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
● Internally impedance matched
● High output power
P1dB = 3.5 W (TYP.) @ f = 12.7 ~ 13.2 GHz
● High linear power gain
GLP = 7.0 dB (TYP.) @ f = 12.7 ~ 13.2 GHz
● High power added efficiency
ηadd = 26 (TYP.) @ f = 12.7 ~ 13.2 GHz, P1dB
APPLICATION
For use in 12.7 ~ 13.2 GHz band amplifiers
產(chǎn)品屬性
- 型號：
MGFK35V2732
- 制造商：
MITSUBISHI
- 制造商全稱：
Mitsubishi Electric Semiconductor
- 功能描述：
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
2017+ |
SMD |
1585 |
只做原裝正品假一賠十! |
詢價 | |||
MICROGATE/麥捷 |
23+ |
SMD |
72000 |
專注電感/現(xiàn)貨足訂貨快價格優(yōu)品質(zhì)保證 |
詢價 | ||
MITSHIBIS |
23+ |
TO-59 |
8510 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
MITSUBISHI |
24+ |
39 |
詢價 | ||||
MITSUBISH |
24+ |
SMD |
5000 |
MITSUBISH專營品牌原裝正品假一罰十 |
詢價 | ||
microgafe |
SMD |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
MITSHIBIS |
23+ |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
MITSUBISH |
NA |
5500 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
MITSUBISHI/三菱 |
24+ |
199 |
現(xiàn)貨供應(yīng) |
詢價 | |||
MITSHIBIS |
23+ |
1688 |
房間現(xiàn)貨庫存:QQ:373621633 |
詢價 |
