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MF1011B900Y

Microwave power transistor

DESCRIPTION NPNsiliconplanarepitaxialmicrowavepowertransistorinaSOT448Agluedcapmetalceramicflangepackage,withbaseconnectedtoflange. FEATURES ?Suitableforshortandmediumpulseapplicationsupto100μspulsewidth,dutyfactor10 ?Diffusedemitterballastingr

PHI

MF1011B900Y

Microwave power transistor; ? Suitable for short and medium pulse applications up to 100 μs pulse width, duty factor 10%\n? Diffused emitter ballasting resistors improve ruggedness\n? Interdigitated emitter-base structure provides high emitter efficiency\n? Gold metallization with barrier realizes very stable characteristics and excellent lifetime\n? Multicell geometry improves power sharing and reduces thermal resistance\n? Internal input and output prematching networks allow an easier design of circuits.;

DESCRIPTION\nNPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange.FEATURES\n? Suitable for short and medium pulse applications up to 100 μs pulse width, duty factor 10%\n? Diffused emitter ballasting resistors improve ruggedness\n? Interdigitated emitter-base structure provides high emitter efficiency\n? Gold metallization with barrier realizes very stable characteristics and excellent lifetime\n? Multicell geometry improves power sharing and reduces thermal resistance\n? Internal input and output prematching networks allow an easier design of circuits.APPLICATIONS\nIntended for use in common base class C broadband pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 MHz to 1090 MHz band. Also suitable for medium pulse, heavy duty operation within this band.

恩XP

MF1011B900

Microwavepowertransistor

DESCRIPTION NPNsiliconplanarepitaxialmicrowavepowertransistorinaSOT448Agluedcapmetalceramicflangepackage,withbaseconnectedtoflange. FEATURES ?Suitableforshortandmediumpulseapplicationsupto100μspulsewidth,dutyfactor10 ?Diffusedemitterballastingr

PHI