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MSF16N50

500VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MSW16N50

500VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MTV16N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTV16N50E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTV16N50E

TMOSPOWERFET16AMPERES500VOLTSRDS(on)=0.40OHM

TMOSE?FETPowerFieldEffectTransistorD3PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETis

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PSM16N50CT

16A500VSingleN??hannelPowerMOSFET

PFC

PFC Device Inc.

SIHB16N50C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHB16N50C

PowerMOSFET

FEATURES ?Lowfigure-of-meritRonxQg ?100avalanchetested ?Gatechargeimproved ?trr/Qrrimproved ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoHS-compliantand/orpa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF16N50C

PowerMOSFET

FEATURES ?Lowfigure-of-meritRonxQg ?100avalanchetested ?Gatechargeimproved ?trr/Qrrimproved ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoHS-compliantand/orpa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF16N50C

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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更多MDF16N50G供應(yīng)商 更新時(shí)間2025-7-22 16:50:00

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