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MJE340

SiliconNPNPowerTransistor

DESCRIPTION ?Collector–EmitterSustainingVoltage-:VCEO(SUS)=300V(Min) ?DCCurrentGain-:hFE=30(Min)@IC=50mA ?LowCollectorSaturationVoltage-:VCE(sat)=1.0V(Max.)@IC=50mA ?ComplementtothePNPMJE350 ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandrel

MJE340

COMPLEMENTARYSILICONPLASTICPOWERTRANSITORS

DESCRIPTION TheCENTRALSEMICONDUCTORMJE340,MJE350typeareComplementarySiliconPowerTransistorsdesignedforpoweroutputstagesinconsumerproductapplications.

MJE340

SiliconPNPPowerTransistors

MJE340

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage- :VCEO(SUS)=300V(Min) ·DCCurrentGain- :hFE=100(Min)@IC=50mA ·LowCollectorSaturationVoltage- :VCE(sat)=1.0V(Max.)@IC=50mA ·ComplementtothePNPMJE350 APPLICATIONS ·Designedforhighvoltage

MJE340

NPNEPITAXIALSILICONPOWERTRANSISTOR

ForuseinHighVoltageGeneralPurposeApplications

MJE340G

PlasticMedium??owerNPNSiliconTransistor

PlasticMedium?PowerNPNSiliconTransistor Thisdeviceisusefulforhigh?voltagegeneralpurposeapplications. Features ?SuitableforTransformerless,Line?OperatedEquipment ?ThermopadConstructionProvidesHighPowerDissipationRatingforHighReliability ?Pb?FreePackageisAvailable

MJE340G

PlasticMedium-PowerNPNSiliconTransistor

MJE340T

iscSiliconNPNPowerTransistor

DESCRIPTION ?Collector–EmitterSustainingVoltage-:VCEO(SUS)=300V(Min) ?DCCurrentGain-:hFE=100(Min)@IC=50mA ?LowCollectorSaturationVoltage-:VCE(sat)=1.0V(Max.)@IC=50mA APPLICATIONS ?Designedforhighvoltageandgeneralpurposeapplications.

MN340

ìHardenedandtempered

Hardenedandtempered Zincplated

MRF340

NPNSILICONRFPOWERTRANSISTOR