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MD1810

Low Standby Power PSR Contronller; ? 內(nèi)置710V功率開(kāi)關(guān)管；\r\n? PSR（源邊）控制模式，省去光耦、TL431及環(huán)路器件；\r\n? 精確的CC/CV（恒壓/恒流）數(shù)字邏輯控制電路；\r\n? 遲滯型的OTP（過(guò)溫保護(hù)）電路；\r\n? 優(yōu)化的驅(qū)動(dòng)電路提高轉(zhuǎn)換效率，滿足5級(jí)能效；\r\n? 采用SOP-7封裝，讓高低壓PIN腳絕緣間距更安全；\r\n? No Load Consumption（待機(jī)功耗）＜70mw；\r\n? 低電磁干擾（EMC）允許使用更簡(jiǎn)單的EMC仰制電路；\r\n? 豐富的保護(hù)電路讓產(chǎn)品工作更安全可靠；\r\n? QR（準(zhǔn)諧振）工作模式；;

MD1810SBG/SCG是一款采用數(shù)字邏輯控制、專為智能手機(jī)級(jí)網(wǎng)絡(luò)產(chǎn)品、小型便攜設(shè)備供電而設(shè)計(jì)的高性能、PSR（源邊反饋）單片開(kāi)關(guān)電源控制器。內(nèi)建710V功率開(kāi)關(guān)管、最大功率5W、精準(zhǔn)的CV/CC（恒流/恒壓）數(shù)字邏輯控制電路將傳統(tǒng)反饋環(huán)路路上的光耦和TL431及其相關(guān)器件省去。\r\n MD1810SBG/SCG采用高集成度的設(shè)計(jì)，將一個(gè)高性能的功率開(kāi)關(guān)管和數(shù)字控制邏輯電路整合到一個(gè)封裝內(nèi)，將各種保護(hù)電路集于一身，使外圍元器件降到最少，節(jié)省外圍系統(tǒng)成本。MD1810SBG/SCG可以很簡(jiǎn)單設(shè)計(jì)成一個(gè)典型的反激式開(kāi)關(guān)變換器，專利的驅(qū)動(dòng)技術(shù)提升功率管的耐壓特效同時(shí)達(dá)到優(yōu)異的轉(zhuǎn)換能效。

MD1810

High Speed QUAD MOSFET Driver; 6.0ns rise and fall time with 1000pF load\n2.0A peak output source/sink current\n1.8 to 5.0V input CMOS compatible\n5.0 to 12V total supply voltage\nSmart logic threshold\nLow jitter design\nFour matched channels\nOutputs can swing below ground\nOutput is high impedence when disabled\nLow inductance package\nHigh-performance thermally-enhanced QFN;

MD1810 is a high-speed quad MOSFET driver. It is designed to drive high voltage P- and N-channel MOSFETs for medical ultrasound imaging applications. The MD1810 can also be used for ultrasound metal flaw detection, Non-Destructive Testing (NDT), piezoelectric transducer drive, clock drive, and PIN diode drive.The MD1810 has four inputs which individually control four outputs. It also has an output enable (OE) pin. When OE is low, all of the outputs will be in a high impedence state regardless of their logic input control. When OE is high, the MD1810 sets the threshold logic transition to (VOE+VGND)/2. This ensures the transition to always be at half the amplitude of the logic input signal. This allows the device to have inherent propagation delay matching regardless of the logic input amplitude. The output stage of the MD1810 has separate power connections enabling the output signal L and H levels to be chosen independently from the VDD and VSS supply voltages. As an example, the input logic levels may be 0 and 1.8V, the control logic may be powered by +5.0 and -5.0V, and the output L and H levels may be varied anywhere over the range of -5.0 to +5.0V. The output stage is capable of peak currents of up to ±2.0A, depending on the supply voltages used and load capacitance present.

MD1810

HIGH SPEED QUAD MOSFET DRIVER

MD1810

High Speed Quad MOSFET Driver

MD1810SBG/SCG

PSR控制器; · 內(nèi)置710V功率開(kāi)關(guān)管；\n· PSR（源邊）控制模式，省去光耦、TL431及環(huán)路器件；\n· 精確的CC/CV（恒壓/恒流）數(shù)字邏輯控制電路；\n· 遲滯型的OTP（過(guò)溫保護(hù)）電路；\n· 優(yōu)化的驅(qū)動(dòng)電路提高轉(zhuǎn)換效率，滿足5級(jí)能效；\n· 采用SOP-7封裝，讓高低壓PIN腳絕緣間距更安全；\n· No Load Consumption（待機(jī)功耗）＜70mw；\n· 低電磁干擾（EMC）允許使用更簡(jiǎn)單的EMC仰制電路；\n· 豐富的保護(hù)電路讓產(chǎn)品工作更安全可靠；\n· QR（準(zhǔn)諧振）工作模式；;

MD1810SBG/SCG是一款采用數(shù)字邏輯控制、專為智能手機(jī)級(jí)網(wǎng)絡(luò)產(chǎn)品、小型便攜設(shè)備供電而設(shè)計(jì)的高性能、PSR（源邊反饋）單片開(kāi)關(guān)電源控制器。內(nèi)建710V功率開(kāi)關(guān)管、最大功率5W、精準(zhǔn)的CV/CC（恒流/恒壓）數(shù)字邏輯控制電路將傳統(tǒng)反饋環(huán)路路上的光耦和TL431及其相關(guān)器件省去。\n\nMD1810SBG/SCG采用高集成度的設(shè)計(jì)，將一個(gè)高性能的功率開(kāi)關(guān)管和數(shù)字控制邏輯電路整合到一個(gè)封裝內(nèi)，將各種保護(hù)電路集于一身，使外圍元器件降到最少，節(jié)省外圍系統(tǒng)成本。MD1810SBG/SCG可以很簡(jiǎn)單設(shè)計(jì)成一個(gè)典型的反激式開(kāi)關(guān)變換器，專利的驅(qū)動(dòng)技術(shù)提升功率管的耐壓特效同時(shí)達(dá)到優(yōu)異的轉(zhuǎn)換能效。

MD1810_07

High Speed Quad MOSFET Driver

MD1810K6-G

HIGH SPEED QUAD MOSFET DRIVER

MD1810K6-G

High Speed Quad MOSFET Driver

MD1810K6-G

Package：16-VQFN 裸露焊盤(pán)；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類(lèi)別：集成電路（IC） 柵極驅(qū)動(dòng)器 描述：IC GATE DRVR HALF-BRIDGE 16QFN