描述 Description

MD1210 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high output current for a capacitive load. The high-speed input stage of the MD1210 can operate from 1.2V to 5.0V logic interface with an optimum operating input signal range of 1.8V to 3.3V. An adaptive threshold circuit is used to set the level translator switch threshold to the average of the input logic 0 and logic 1 levels. The input logic levels may be ground referenced, even though the driver is putting out bipolar signals. The level translator uses a proprietary circuit, which provides DC coupling together with high-speed operation. VDD1, VDD2, and VH should be connected to the positive supply voltage, and VSS1, VSS2, and VL should be connected to 0V or to Ground. The GND pin is the logic control input signal digital ground. The output stage is capable of peak currents of up to ±2.0A, depending on the supply voltages used and load capacitance present. The OE pin serves a dual purpose. First, its logic H level is used to compute the threshold voltage level for the channel input level translators. Secondly, when OE is low, the outputs are disabled, with the A output high and the B output low. This assists in properly pre-charging the AC coupling capacitors that may be used in series in the gate drive circuit of an external PMOS and NMOS transistor pair.

特性 Features

6ns rise and fall time with 1000pF load
2.0A peak output source/sink current
1.2V to 5.0V input CMOS compatible
4.5V to 13V single positive supply voltage
Smartlogic threshold
Low jitter design
Two matched channels
Outputs can swing below ground
Low inductance package
Thermally-enhanced package

簡介

MD1210屬于集成電路（IC）的柵極驅(qū)動器。由制造生產(chǎn)的MD1210柵極驅(qū)動器柵極驅(qū)動器電源管理集成電路 (PMIC) 可用于提供隔離、放大、參考位移、自舉或其他必要功能，這些功能可將來自電源轉(zhuǎn)換應(yīng)用中控制設(shè)備的信號連接到電源被控制通過的半導(dǎo)體設(shè)備（通常為 FET 或 IGBT）。任何特定設(shè)備提供的確切功能各不相同，但與它適合驅(qū)動的半導(dǎo)體配置相關(guān)。