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首頁 >MCU60P06-TP>規(guī)格書列表

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LMAK60P06

P-ChannelEnhancementModeFieidEffectTransistor

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

NCE60P06S

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE60P06Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=-60V,ID=-6A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

RFF60P06

25A??60V,0.030Ohm,P-ChannelPowerMOSFET

Intersil

Intersil Corporation

RFG60P06E

60A,60V,0.030Ohm,ESDRated,P-ChannelPowerMOSFET

TheRFG60P06EP-ChannelpowerMOSFETismanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulato

Intersil

Intersil Corporation

RFG60P06E

60A,60V,0.030Ohm,ESDRated,P-ChannelPowerMOSFET

TheRFG60P06EP-ChannelpowerMOSFETismanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulato

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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