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MJD243

NPNSILICONPOWERTRANSISTOR4AMPERES100VOLTS12.5WATTS

...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. ?Collector–EmitterSustainingVoltage—VCEO(sus)=100Vdc(Min)@IC=10mAdc ?HighDCCurrentGain—hFE=40(Min)@IC=200mAdc =15(Min)@IC=

MJD243

ComplementarySiliconPlasticPowerTransistor

ComplementarySiliconPlasticPowerTransistor DPAK?3forSurfaceMountApplications Designedforlowvoltage,low?power,high?gainaudioamplifierapplications. Features ?Collector?EmitterSustainingVoltage? VCEO(sus)=100Vdc(Min)@IC =10mAdc ?HighDCCur

MJD243

ComplementarySiliconPlasticPowerTransistor

MJD243

ComplementarySiliconPlasticPowerTransistorDPAK-3forSurfaceMountApplications

MJD243

ComplementarySiliconPlasticPowerTransistors

MJD243

ComplementarySiliconPlasticPowerTransistors

MJD243

SiliconNPNtransistorinaTO-252PlasticPackage

Descriptions SiliconNPNtransistorinaTO-252PlasticPackage. Features LowCollector?EmitterSaturationVoltage,HighCurrent?Gain. Applications Lowpoweraudioamplifier,Lowcurrent,highspeedswitchingapplications.

MJD243

iscSiliconNPNPowerTransistor

DESCRIPTION ?DCCurrentGain- :hFE=40(Min)@IC=0.2A ?LowCollectorSaturationVoltage- :VCE(sat)=0.3V(Max.)@IC=0.5A ?ComplementtothePNPMJD253 ?MinimumLot-to-Lotvariationsforrobustdeviceperformance andreliableoperation APPLICATIONS ?Designedforlowpo

MJD243

ComplementarySiliconPlasticPowerTransistors

MJD243

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.3V(Max)@IC=0.5A APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications