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SI4435DDY

P-ChannelMOSFETusesadvancedtrenchtechnology

SI4435DY

30VP-ChannelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationsrequiringawiderangeofgavedrivevoltageratings(4.5V–25V). Features ?–8.8A,–30VRDS(ON)=20mΩ@VGS

SI4435DY

P-ChannelMOSFET

■Features ●VDS=-30V ●RDS(on)=0.02Ω@VGS=-10V ●RDS(on)=0.035Ω@VGS=-4.5V

SI4435DY

PowerMOSFET(Vdss=-30V,Rds(on)=0.020ohm

VDSS=-30V RDS(on)=0.020? Description TheseP-channelHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforusei

SI4435DY-HF

P-ChannelMOSFET

■Features ●VDS=-30V ●RDS(on)=0.02Ω@VGS=-10V ●RDS(on)=0.035Ω@VGS=-4.5V ●Pb?FreePackageMaybeAvailable.TheG?SuffixDenotesa Pb?FreeLeadFinish

SI4435DYPBF

SimpleDriveRequirements

SI4435DYPBF

HEXFETPowerMOSFET

VDSS=-30V RDS(on)=0.020? Description TheseP-channelHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforusei

SI4435DYTRPBF

UltraLowOn-Resistance

VDSS=-30V RDS(on)=0.020? Description TheseP-channelHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforusei

SI4435FDY

P-Channel30V(D-S)MOSFET

SM4435KC-TRL

P-Channel30-V(D-S)MOSFET