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MMBT3906

PNPGeneralPurposeAmplifier

Features ?LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?Capableof300mWattsofPowerDissipation ?Marking:2A

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMBT3906

SMALLSIGNALTRANSISTORS(PNP)

FEATURES ?PNPSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. ?Ascomplementarytype,theNPN transistorMMBT3904isrecommended. ?ThistransistorisalsoavailableintheTO-92casewith thetypedesignation2N3906.

GE

GE Industrial Company

MMBT3906

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?EpitaxialPlanarDieConstruction ?IdealforMediumPowerAmplificationandSwitching ?ComplementaryNPNType:MMBT3904 ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?QualifiedtoAEC-Q101StandardsforHig

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

MMBT3906

GeneralPurposeTransistor(PNP)

PNPSiliconType Features EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable(MMBT3904) IdealforMediumPowerAmplificationandSwitching

COMCHIPComchip Technology

典琦典琦科技股份有限公司

MMBT3906

PNPGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MMBT3906

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

MMBT3906

PNPGENERALPURPOSESWITCHINGTRANSISTOR

VOLTAGE40VoltsPOWER225mWatts FEATURES ?PNPepitaxialsilicon,planardesign ?Collector-emittervoltageVCE=-40V ?CollectorcurrentIC=-200mA ?BothnormalandPbfreeproductareavailable: Normal:80~95Sn,5~20Pb Pbfree:98.5Snabove

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

MMBT3906

30.3WattsPNPPlastic-EncapsulateTransistors

FEATURES -Epitaxialplanardieconstruction -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeans greencompound(halogen-free)

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

MMBT3906

SurfaceMountSi-Epi-PlanarSwitchingTransistors

SurfaceMountSi-Epi-PlanarSwitchingTransistors ?Powerdissipation250mW ?PlasticcaseSOT-23(TO-236) ?Weightapprox.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedandreel

DiotecDiotec Semiconductor

德歐泰克

MMBT3906

PNPGeneralPurposeTransistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailable(MMBT3904). ●CollectorCurrentCapabilityICM=-200mA. ●LowVoltage(Max:-40V). APPLICATIONS ●Idealformediumpoweramplificationandswitching.

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

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MICROCHI
23+
SSOP-24
10000
一級(jí)代理原廠VIP渠道,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、
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Microchip
22+
9000
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Microchip
23+
9000
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Microchip
23+
8000
只做原裝現(xiàn)貨
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Microchip
23+
7000
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MICROCHIP
17+
SSOP-20
6200
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Microchip Technology
24+
-
65200
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MICROCHIP
20+
IC
1001
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MICROCHIP/微芯
23+
SSOP20
50000
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Microchip
22+
NA
1899
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更多MCP3906T-ISLASHSS供應(yīng)商 更新時(shí)間2025-7-22 16:31:00

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