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NP80N06NLG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP80N06PLG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP80N06PLG

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

NP80N06PLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP80N06MLG,NP80N06NLG,andNP80N06PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N06MLG,NP80N06NLG RDS(on)1=8.6mΩMAX

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

PHB80N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP80N06LTissup

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PHB80N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP80N06LTissup

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PHB80N06LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHB80N06T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PHB80N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

PHP80N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP80N06LTissup

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

技術(shù)參數(shù)

  • Automotive Compliant PPAP readiness：

    No

  • Number of Functions：

    Single

  • Channel：

    N

  • Package：

    DFN5060

  • VDS(V)：

    60

  • VGS(V)：

    ±20

  • ID(A)：

    80

  • RDS(ON)Max@VGS=10V(Ω)：

    0.0042

  • RDS(ON)Max@VGS=4.5V(Ω)：

    0.0052

  • VGS(th)Max(V)：

    2.5

  • ESD Diode：

    No

  • Status：

    Active

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INFINEON
23+
8000
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2025+
DFN5060
986966
國(guó)產(chǎn)
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MCC/美微科
2511
DFN5060
360000
電子元器件采購(gòu)降本 30%!盈慧通原廠直采,砍掉中間差價(jià)
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MCC(美微科)
2447
DFN5060
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MCC美微科
23+
DFN5060
22820
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Micro Commercial Co
2022+
8-PowerVDFN
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
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MCC/美微科
21+
DFN5060-
2500
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MCC
22+
NA
20
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MCC(美微科)
24+
DFN(5x6)
7350
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24+
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更多MCAC80N06Y供應(yīng)商 更新時(shí)間2025-7-29 15:01:00

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