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MC74VHC1G03DFT1

2-InputNORGatewithOpenDrainOutput

TheMC74VHC1G03isanadvancedhighspeedCMOS2?inputNORgatewithanopendrainoutputfabricatedwithsilicongateCMOStechnology. Features ?HighSpeed:tPD=3.6ns(Typ)atVCC=5V ?LowInternalPowerDissipation:ICC=1A(Max)atTA=25°C ?PowerDownProtectionProvidedon

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MC74VHC1G03DFT1

2-InputNANDGatewithOpenDrainOutput

TheMC74VHC1G03isanadvancedhighspeedCMOS2–inputNORgatewithanopendrainoutputfabricatedwithsilicongateCMOStechnology.ItachieveshighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingCMOSlowpowerdissipation. TheMC74VHC1G03inputstructureprov

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

MC74VHC1G03DFT1

2-InputNANDGatewithOpenDrainOutput

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MC74VHC1G03DFT1

Single2??nputNORGatewithOpenDrainOutput

TheMC74VHC1G03isanadvancedhighspeedCMOS2?inputNORgatewithanopendrainoutputfabricatedwithsilicongateCMOStechnology. Features ?HighSpeed:tPD=3.6ns(Typ)atVCC=5V ?LowInternalPowerDissipation:ICC=1A(Max)atTA=25°C ?PowerDownProtectionProvidedon

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MC74VHC1G03DFT1G

Single2-InputNORGatewithOpenDrainOutput

TheMC74VHC1G03/MC74VHC1GT03isa2?inputNORGate withanopendrainoutputintinyfootprintpackages. Theinputstructuresprovideprotectionwhenvoltagesupto5.5V areapplied,regardlessofthesupplyvoltage.Thisallowsthedeviceto beusedtointerface5Vcircuitsto3Vcircuit

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MC74VHC1G03DFT1G

Single2-InputNORGate

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MC74VHC1G03DFT1G

Single2??nputNORGatewithOpenDrainOutput

TheMC74VHC1G03isanadvancedhighspeedCMOS2?inputNORgatewithanopendrainoutputfabricatedwithsilicongateCMOStechnology. Features ?HighSpeed:tPD=3.6ns(Typ)atVCC=5V ?LowInternalPowerDissipation:ICC=1A(Max)atTA=25°C ?PowerDownProtectionProvidedon

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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