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MC14049

Hex Buffer

TheMC14049BHexInverter/BufferandMC14050BNoninvertingHexBufferareconstructedwithMOSP–ChannelandN–Channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSdevicesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisdesired.Thes

MC14049B

Hex Buffer

TheMC14049BHexInverter/BufferandMC14050BNoninvertingHexBufferareconstructedwithMOSP–ChannelandN–Channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSdevicesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisdesired.Thes

MC14049B

Hex Buffer

TheMC14049BHexInverter/BufferandMC14050BNoninverting HexBufferareconstructedwithMOSP?ChannelandN?Channel enhancementmodedevicesinasinglemonolithicstructure.These complementaryMOSdevicesfindprimaryusewherelowpower dissipationand/orhighnoiseimmunityisdesired.

MC14049B

六路逆變器; ? High Source and Sink Currents\n? High-to-Low Level Converter\n? Supply Voltage Range = 3.0 V to 18 V\n? VIN can exceed VDD\n? Meets JEDEC B Specifications\n? Improved ESD Protection On All Inputs\n? Pb-Free Packages are Available*\n;

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P-Channel and N-Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. These devices provide logic level conversion using only one supply voltage, VDD. The input-signal high level (VIH) can exceed the VDD supply voltage for logic level conversions. Two TTL/DTL loads can be driven when the devices are used as a CMOS-to-TTL/DTL converter (VDD = 5.0 V, VOL OL >=3.2 mA). Note that pins 13 and 16 are not connected internally on these devices; consequently connections to these terminals will not affect circuit operation.

MC14049B_V01

Hex Buffer

TheMC14049BHexInverter/BufferandMC14050BNoninverting HexBufferareconstructedwithMOSP?ChannelandN?Channel enhancementmodedevicesinasinglemonolithicstructure.These complementaryMOSdevicesfindprimaryusewherelowpower dissipationand/orhighnoiseimmunityisdesired.

MC14049BCP

Hex Buffer

TheMC14049BHexInverter/BufferandMC14050BNoninvertingHexBufferareconstructedwithMOSP–ChannelandN–Channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSdevicesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisdesired.Thes

MC14049BCP

MC14049, MC14050 / Hex buffer;

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement modedevices in a single monolithic structure. These complementary MOS devicesfind primary use where low power dissipationand/or high noise immunityis desired. These devices provide logic level conversion using only one supply voltage, VDD. Theinput–signal high level (VIH )can exceed the VDDsupply voltage for logiclevel conversions. Two TTL/DTL loads can be driven when the devices areused as a CMOS–to–TTL/DTL converter (VDD= 5.0 V, VOL \u00010.4 V, IOL ≥3.2 mA). Notethat pins 13 and 16 are not connected ?internally on these devices; consequentlyconnections to these terminals will not affect circuit operation.

MC14049BCPG

Hex Buffer

TheMC14049BHexInverter/BufferandMC14050BNoninvertingHexBufferareconstructedwithMOSP–ChannelandN–Channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSdevicesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisdesired.Thes

MC14049BD

Hex Buffer

TheMC14049BHexInverter/BufferandMC14050BNoninvertingHexBufferareconstructedwithMOSP–ChannelandN–Channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSdevicesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisdesired.Thes

MC14049BDG

Hex Buffer

TheMC14049BHexInverter/BufferandMC14050BNoninvertingHexBufferareconstructedwithMOSP–ChannelandN–Channelenhancementmodedevicesinasinglemonolithicstructure.ThesecomplementaryMOSdevicesfindprimaryusewherelowpowerdissipationand/orhighnoiseimmunityisdesired.Thes