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首頁>MC-4R96CEE6C-845>規(guī)格書詳情

MC-4R96CEE6C-845中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

MC-4R96CEE6C-845
廠商型號

MC-4R96CEE6C-845

功能描述

Direct Rambus DRAM RIMM Module 96M-BYTE 48M-WORD x 16-BIT

文件大小

127.77 Kbytes

頁面數(shù)量

16

生產(chǎn)廠商 Renesas Electronics America
企業(yè)簡稱

NEC瑞薩

中文名稱

日本瑞薩電子株式會社官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-7-25 15:14:00

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MC-4R96CEE6C-845規(guī)格書詳情

Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

MC-4R96CEE6B, 4R96CEE6C modules consists of six 128M Direct Rambus DRAM (Direct RDRAM?) devices (μPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.

Features

? 184 edge connector pads with 1mm pad spacing

? 96 MB Direct RDRAM storage

? Each RDRAM? has 32 banks, for 192 banks total on module

? Gold plated contacts

? RDRAMs use Chip Scale Package (CSP)

? Serial Presence Detect support

? Operates from a 2.5 V supply

? Low power and powerdown self refresh modes

? Separate Row and Column buses for higher efficiency

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