Description

The MC-4516CB647EF and MC-4516CB647PF are 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 128M SDRAM: μPD45128841 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

? 16,777,216 words by 64 bits organization

? Clock frequency and access time from CLK

? Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

? Pulsed interface

? Possible to assert random column address in every cycle

? Quad internal banks controlled by BA0 and BA1 (Bank Select)

? Programmable burst-length (1, 2, 4, 8 and full page)

? Programmable wrap sequence (sequential / interleave)

? Programmable /CAS latency (2, 3)

? Automatic precharge and controlled precharge

? CBR (Auto) refresh and self refresh

? All DQs have 10 ? ±10 of series resistor

? Single 3.3 V ± 0.3 V power supply

? LVTTL compatible

? 4,096 refresh cycles/64 ms

? Burst termination by Burst Stop command and Precharge command

? 168-pin dual in-line memory module (Pin pitch = 1.27 mm)

? Unbuffered type

? Serial PD