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MBRS330

SCHOTTKY BARRIER RECTIFIERS

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,hi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS330

SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Forsurfacemountedapplications Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Built-instrainrelief,idealforautomatedplacement Highforwardsurgecurrentc

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

MBRS330

3A 30V Schottky diode

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

PDF上傳者：深圳冠榮電子有限公司

MBRS330

肖特基二極體;

SunmateSUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

MBRS330T3

Surface Mount Schottky Power Rectifier; ? Small Compact Surface Mountable Package with J?Bend Leads\n? Rectangular Package for Automated Handling\n? Highly Stable Oxide Passivated Junction\n? Very Low Forward Voltage Drop (0.5 V Max @ 3.0 A, TJ = 25°C)\n? Excellent Ability to Withstand Reverse Avalanche Energy Transients\n? Guard?Ring for Stress Protection\n\n;

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTSThese devices employ the Schottky Barrier principle in a large area metal?to?silicon power diode. State?of?the?art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

NXPNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MBRS330T3

SCHOTTKY BARRIER RECTIFIERS

SCHOTTKYBARRIERRECTIFIERS3.0AMPERES20,30,40VOLTS ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,hi

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS330T3G

Surface Mount Schottky Power Rectifier

ThesedevicesemploytheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolari

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS330T3G

Surface Mount Schottky Power Rectifier

ThesedevicesemploytheSchottkyBarrierprincipleinalargearea metal-to-siliconpowerdiode.State-of-the-artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpo

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS330P

Surface Mount Schottky Power Rectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MBRS330PT3G

Surface Mount Schottky Power Rectifier

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

技術(shù)參數(shù)

  • AEC-Q101Qualified：

    _

  • IF(A）：

    3

  • VRRM(V)：

    30

  • VRMS(V)：

    21

  • VDC(V)：

    30

  • IFSM(A)：

    80

  • VF(v)：

    0.5

  • TRR(NS)：

    _

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SMCDO-214AB
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更多MBRS330供應(yīng)商 更新時(shí)間2025-7-28 18:20:00

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