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MBRF30100CTR

SCHOTTKYRECTIFIER

Features: ?150℃TJoperation ?Centertapconfiguration ?Lowforwardvoltagedrop ?Highpurity,hightemperatureepoxyencapsulationforenhanced mechanicalstrengthandmoistureresistance ?Highfrequencyoperation ?Guardringforenhancedruggednessandlongtermreliability ?Thi

SMCSangdest Microelectronic (Nanjing) Co., Ltd

燒結(jié)金屬

MBRF30100CTR

30.0AmperesInsulatedDualCommonAnodeSchottkyHalfBridgeRectifiers

Features ◆StandardMBRmaturedtechnologywithhighreliablity ◆Lowforwardvoltagedrop ◆Highcurrentcapability ◆Lowreverseleakagecurrent ◆Highsurgecurrentcapability Application ◆AutomotiveInvertersandSolarInverters ◆PlatingPowerSupply,SMPS,EPSandUPS ◆CarAudioAmp

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

MBRF30100CTR

MBRF30100CTRSCHOTTKYRECTIFIER

Features 150?CTJoperation Centertapconfiguration Lowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongterm reliability ThisisaPb?Fre

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件（南京）有限公司

MBRF30100CT-Y

DualCommonCathodeSchottkyRectifier

FEATURES ●Lowpowerloss,highefficiency ●Guardringforovervoltageprotection ●Highsurgecurrentcapability ●RoHSCompliant ●Halogen-freeaccordingtoIEC61249-2-21 APPLICATIONS ●Switchingmodepowersupply(SMPS) ●Adapters ●DCtoDCconverters MECHANICALDATA ●Case:ITO-2

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

MBRI30100CT

30.0AmpsSurfaceMountSchottkyBarrierRectifier

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

MBRI30100CT

30.0AMPSSchottkyBarrierRectifier

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

MBRI30100CT

DualCommonCathodeSchottkyRectifier

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

MBRL30100FCT

SchottkyDiodes

FEATURES Highfrequencyoperation Lowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Guardringforenhancedruggednessandlongtermreliability Solderdip275°Cmax.7s,perJESD22-B106

RFERFE international

RFE國際公司RFE國際股份有限公司

MBRU30100CTA

SchottkyDiodes

FEATURES Highfrequencyoperation Lowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Guardringforenhancedruggednessandlongtermreliability Solderdip275°Cmax.7s,perJESD22-B106

RFERFE international

RFE國際公司RFE國際股份有限公司

MBRU30100FCTA

SchottkyDiodes

FEATURES Highfrequencyoperation Lowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Guardringforenhancedruggednessandlongtermreliability Solderdip275°Cmax.7s,perJESD22-B106

RFERFE international

RFE國際公司RFE國際股份有限公司

技術(shù)參數(shù)

  • VRM_Max (V)：

    100

  • Io_Max(A)：

    30

  • IFSM_Max(A)：

    320

  • Rated lo(A)：

    15

  • VF_Max(V)：

    0.65

  • IR@25℃IR(uA)：

    0.2

  • IR@100℃IR(uA)：

    50

  • Tj（℃）：

    -55～+150

  • Status：

    Active

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更多MBRBU30100CTA供應(yīng)商 更新時間2025-7-28 16:23:00

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