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MBR3045PT

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applica

文件:125.04 Kbytes 頁(yè)數(shù):2 Pages

SIRECTIFIER

矽萊克電子

MBR3045PT

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A Features ? High surge capacity. ? For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ? Metal silicon junction, majority carrier conduction. ? High current capacity, low forward voltage drop. ? Gu

文件:239.89 Kbytes 頁(yè)數(shù):2 Pages

LUGUANG

魯光電子

MBR3045PT

30Ampere Heatsink Dual Common Cathode Schottky Barrier Rectifier Diodes

Features  Low forward voltage drop  ThinkiSemi matured planar process schottky  High current capability  High surge current capability  Low reverse leakage current Application  Inverter/UPS  Plating Power Supply/SMPS  Car Audio Amplifier and Sound Device System

文件:3.49642 Mbytes 頁(yè)數(shù):3 Pages

THINKISEMI

思祁半導(dǎo)體

MBR3045PT

30A SCHOTTKY RECTIFIER

30A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

文件:209.27 Kbytes 頁(yè)數(shù):2 Pages

DIGITRON

MBR3045PT

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage d

文件:377.75 Kbytes 頁(yè)數(shù):2 Pages

DSK

MBR3045PT

Dual Common-Cathode Schottky Rectifier

DESCRIPTION The MBR3045PT Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature FEATURES ? 150°C TJ operation ? High frequency operation ? Low forward voltage drop ?

文件:259.67 Kbytes 頁(yè)數(shù):5 Pages

NELLSEMI

尼爾半導(dǎo)體

MBR3045PTG

SWITCHMODE Power Rectifier

These state?of?the?art devices use the Schottky Barrier principle with a platinum barrier metal. Features ? Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating ? Guard?ring for Stress Protection ? Low Forward Voltage ? 175°C Operating Junction Tem

文件:64.2 Kbytes 頁(yè)數(shù):4 Pages

ONSEMI

安森美半導(dǎo)體

MBR3045PTR

30 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers

Features * Standard MBR matured technology with high reliablity * Low forward voltage drop * High current capability * Low reverse leakage current * High surge current capability Application * Automotive Inverters/Solar Inverters * Plating Power Supply,SMPS and UPS * Car Audio Amplifiers

文件:948.78 Kbytes 頁(yè)數(shù):2 Pages

THINKISEMI

思祁半導(dǎo)體

MBR3045ST

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 30 Amperes FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. ? Metal silicon junction, majority carrier conduction ? Low power loss, high efficiency. ? High current capability

文件:52.7 Kbytes 頁(yè)數(shù):2 Pages

PANJIT

強(qiáng)茂

MBR3045ST

30 AMP SCHOTTKY BARRIER RECTIFIER

30 AMP SCHOTTKY BARRIER RECTIFIER Schottky barrier rectifier Guard ring for reverse protection Low power loss, high efficiency High surge capacity VRRM 35 to 45 Volts

文件:131.53 Kbytes 頁(yè)數(shù):2 Pages

Microsemi

美高森美

技術(shù)參數(shù)

  • VRRM Max.[V]:

    45

  • IF[A]:

    30

  • IFSM[A]:

    250

  • VF@IF Max.[V]:

    0.7

  • VF@IF Max.[A]:

    30

  • IR@VR Max.[μA]:

    100

  • IR@VR Max.[V]:

    45

  • Package:

    TO-220AC

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華晶
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MOTOROLA
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2020+
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6000
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更多MBR3045供應(yīng)商 更新時(shí)間2025-8-30 9:38:00