Introduction

The MBC13917 is a cost-effective, high isolation amplifier fabricated with an advanced RF BiCMOS process using the SiGe:C module. This is the leadless package version of the MBC13916 device.

The MBC13917 is designed for a wide range of general purpose RF applications and has excellent high frequency gain and noise figure. On-chip bias circuitry sets the bias point while matching is accomplished off-chip, affording the maximum in application flexibility.

特性 Features

The MBC13917 has the following features:

? Usable frequency range = 100 MHz to 2500 MHz

? 27 dB typical gain at 434 MHz, Vcc = 2.7V

? NFmin (device level) = 0.95 dB @ 434 MHz

? NFmin (device level) = 0.95 dB @ 900 MHz

? 6.5 dBm typical output power at -10 dBm Pin at 900 MHz, Vcc = 2.7V

? 46 dB typical reverse isolation (device level) at 434 MHz, Vcc = 2.7V

? 4.7 mA typical bias current at Vcc = 2.7V

? 2.7V to 3.3V supply

? Industry standard MLPD-6 leadless package

? Available only in tape and reel packaging

Applications

Ideal for use in any RF product that operates between 100 MHz and 2.5 GHz, and may be applied in:

? Buffer amplifiers

? Mixers

? IF amplifiers

? Voltage controlled oscillators (VCOs)

? Low power amplifiers

? Gain block in RF end products

? Smart metering

? Industrial—scientific and medical (ISM)

? Consumer—WLAN, 802.11 b/g

? Auto—TPMS, RKE, GPS, active antennas, wireless security