首頁(yè) >MAX4951CTP+TS>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
EyeDiagramTestCircuitwithSMAInputs/Outputs | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim | ||
EyeDiagramTestCircuitwithSMAInputs/Outputs | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim | ||
SUPERLOWNOISEInGaAsHEMT DESCRIPTION TheMGF4951A/MGF4952Asuper-lownoiseHEMT(HighElectronMobilityTransistor)isdesignedforuseinCtoKbandamplifiers.Thelead-lessceramicpackageassuresminimumparasiticlosses. FEATURES Lownoisefigure@f=12GHz MGF4951A:NFmin.=0.40dB(Typ.) MGF495 | MitsubishiMitsubishi Electric Semiconductor 三菱電機(jī)三菱電機(jī)株式會(huì)社 | Mitsubishi | ||
SUPERLOWNOISEInGaAsHEMT | MitsubishiMitsubishi Electric Semiconductor 三菱電機(jī)三菱電機(jī)株式會(huì)社 | Mitsubishi | ||
SUPERLOWNOISEInGaAsHEMT DESCRIPTION TheMGF4951A/MGF4952Asuper-lownoiseHEMT(HighElectronMobilityTransistor)isdesignedforuseinCtoKbandamplifiers.Thelead-lessceramicpackageassuresminimumparasiticlosses. FEATURES Lownoisefigure@f=12GHz MGF4951A:NFmin.=0.40dB(Typ.) MGF495 | MitsubishiMitsubishi Electric Semiconductor 三菱電機(jī)三菱電機(jī)株式會(huì)社 | Mitsubishi | ||
SurgeClamping,TransientOvervoltageSuppressorBidirectional Description: TheNTE4900seriesofsiliconTransientSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighenergyvoltagetransients.Transientovervoltagesuppressordeviceshavebecomeveryimportantasaconsequenceoftheirhighsurgecapability,extremelyfastresponsetime | NTE NTE Electronics | NTE | ||
DualN-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
DualN-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SingleN??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SingleN??hannelPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
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