首頁 >MAX464CWI-T>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Two-Channel,Triple/QuadRGBVideoSwitchesandBuffers GeneralDescription TheMAX463–MAX470seriesoftwo-channel,triple/quadbufferedvideoswitchesandvideobufferscombineshigh-accuracy,unity-gain-stableamplifierswithhigh-performancevideoswitches.Fastswitchingtimeandlowdifferentialgainandphaseerrormakethisseriesofswitches | MaximMaxim Integrated Products 美信美信半導體 | Maxim | ||
Two-Channel,Triple/QuadRGBVideoSwitchesandBuffers GeneralDescription TheMAX463–MAX470seriesoftwo-channel,triple/quadbufferedvideoswitchesandvideobufferscombineshigh-accuracy,unity-gain-stableamplifierswithhigh-performancevideoswitches.Fastswitchingtimeandlowdifferentialgainandphaseerrormakethisseriesofswitches | MaximMaxim Integrated Products 美信美信半導體 | Maxim | ||
7/8-BitSingle/DualI2CDigitalPOTwithNon-VolatileMemory | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
7/8-BitSingle/DualI2CDigitalPOTwithNonvolatileMemory | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
NPNSiliconRFpowertransistor Description: MRF464isdesignedprimarilyforapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz,insinglesidebandmobile,marineandbasestationequipment. Features: Specified28Volt,30MHzCharacteristics: OutputPower=80W(PEP),MinimumGain=15Db,Efficiency= | ELEFLOW eleflow technologies co., ltd. | ELEFLOW | ||
NPNSILICONRFPOWERTRANSISTOR DESCRIPTION: TheASIMRF464isDesignedfor28VoltPowerAmplifierApplicationsupto30MHz. FEATURESINCLUDE: ?PG=15dBMin.@30MHz&80W ?CommonEmitter | ASI Advanced Semiconductor | ASI | ||
RFPOWERTRANSISTORNPNSILICON TheRFLine NPNSiliconRFPowerTransistor ...designedprimarilyforapplicationsasahigh–powerlinearamplifierfrom2.0to30MHz,insinglesidebandmobile,marineandbasestationequipment. ?Specified28Volt,30MHzCharacteristics— OutputPower=80W(PEP) MinimumGain= | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
5.08and6.35mmPinSpacing??FixedPCBBlocks | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
SiliconComplementaryMOSFETTransistorsEnhancementModeforSwitchingApplications AbsoluteMaximumRatings: Drain–SourceVoltage,VDS..........................25V Drain–GateVoltage,VDG............................30V Gate–SourceVoltage,VGS......................±30V GateCurrent,IG | NTE NTE Electronics | NTE | ||
WidebandGainBlock | SJM SJM Prewell. All Rights Reserved. | SJM |
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