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SI4435BDY

P-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?AdvancedHighCellDensityProcess ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitches ?BatterySwitch

VishayVishay Siliconix

威世科技威世科技半導體

Si4435BDY

P-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?AdvancedHighCellDensityProcess ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitches ?BatterySwitch

VishayVishay Siliconix

威世科技威世科技半導體

Si4435DDY

P-Channel30-V(D-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

SI4435DDY

P-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitches ?BatterySwitch

VishayVishay Siliconix

威世科技威世科技半導體

SI4435DDY

P-Channel30-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitches ?BatterySwitch

VishayVishay Siliconix

威世科技威世科技半導體

SI4435DDY

P-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導體有限公司

SI4435DY

PowerMOSFET(Vdss=-30V,Rds(on)=0.020ohm

VDSS=-30V RDS(on)=0.020? Description TheseP-channelHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforusei

IRF

International Rectifier

SI4435DY

30VP-ChannelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationsrequiringawiderangeofgavedrivevoltageratings(4.5V–25V). Features ?–8.8A,–30VRDS(ON)=20mΩ@VGS

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

SI4435DY

P-ChannelMOSFET

■Features ●VDS=-30V ●RDS(on)=0.02Ω@VGS=-10V ●RDS(on)=0.035Ω@VGS=-4.5V

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

SI4435DY-HF

P-ChannelMOSFET

■Features ●VDS=-30V ●RDS(on)=0.02Ω@VGS=-10V ●RDS(on)=0.035Ω@VGS=-4.5V ●Pb?FreePackageMaybeAvailable.TheG?SuffixDenotesa Pb?FreeLeadFinish

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

詳細參數(shù)

  • 型號:

    MAX4435ESA-T

  • 功能描述:

    高速運算放大器

  • RoHS:

  • 制造商:

    Texas Instruments

  • 通道數(shù)量:

    1 電壓增益

  • dB:

    116 dB

  • 輸入補償電壓:

    0.5 mV

  • 轉換速度:

    55 V/us

  • 工作電源電壓:

    36 V

  • 電源電流:

    7.5 mA

  • 最大工作溫度:

    + 85 C

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    SOIC-8

  • 封裝:

    Tube

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SOP8
10000
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MSOP8
2032
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MSOP8
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MSOP8
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MSOP8
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16790
特價現(xiàn)貨
詢價
更多MAX4435ESA-T供應商 更新時間2025-7-27 11:02:00