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MJ4401

BipolarNPNDeviceinaHermeticallysealedTO66MetalPackage.

SEME-LAB

Seme LAB

MMBT4401

NPNSiliconEpitaxialPlanarTransistor

FEATURES ?Epitaxialplanardieconstruction. ?ComplementaryPNPtypeavailable:MMBT4403. ?Idealformediumpoweramplificationandswitching. APPLICATIONS ?Generalpurposeapplication,switchingapplication.

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

MMBT4401

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors ?Powerdissipation250mW ?PlasticcaseSOT-23 ?Weightapprox.–Gewichtca.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedan

DiotecDiotec Semiconductor

德歐泰克

MMBT4401

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors ?Powerdissipation250mW ?PlasticcaseSOT-23 ?Weightapprox.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedandreeled

DiotecDiotec Semiconductor

德歐泰克

MMBT4401

NPNGENERALPURPOSEAMPLIFIER

DESCRIPTION TheUTCMMBT4401isdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.

UTCUnisonic Technologies

友順友順科技股份有限公司

MMBT4401

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

美臺半導(dǎo)體

MMBT4401

NPNGeneralPuposeAmplifier

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MMBT4401

SwitchingTransistorNPNSilicon

SwitchingTransistorNPNSilicon

WEITRON

Weitron Technology

MMBT4401

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?EpitaxialPlanarDieConstruction ?ComplementaryPNPTypeAvailable(MMBT4403) ?IdealforMediumPowerAmplificationandSwitching

TRSYS

Transys Electronics

MMBT4401

NPNGeneralPurposeAmplifier

Thisdeviceisdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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