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MBR150

SCHOTTKYBARRIERRECTIFIERDIODES

FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Highefficiency *Lowpowerloss *Lowforwardvoltagedrop *Pb/RoHSFree

SYNSEMI

SynSemi，Inc.

MBR150

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200VoltsCURRENT1.0Amperes FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Foruseinlowvoltage,highfrequenc

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

MBR150

SchottkyRectifier,1A

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

MBR150

1.0ASCHOTTKYBARRIERDIODE

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

MBR150

1.0AAxialLeadedSchottkyBarrierRectifierDiodes

Features ●SchottkyBarrierChip ●GuardRingDieConstructionforTransientProtection ●HighCurrentCapability ●LowPowerLoss,HighEfficiency ●HighSurgeCurrentCapability ●ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling,andPolarityProtectionApplications

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

MBR150

1ASCHOTTKYRECTIFIER

1ASCHOTTKYRECTIFIER

DIGITRON

Digitron Semiconductors

MBR150

LowReverseCurrent

Features ?LowReverseCurrent ?LowStoredCharge.MajorityCarrierConduction ?LowPowerLoss/HighEfficiency ?HighlyStableOxidePassivatedJunction

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MBR150E

SCHOTTKYBARRIERRECTIFIERSREVERSEVOLTAGE20VTO200VFORWARDCURRENT1.0A

DESCRIPTION The MBR120E~MBR1200Eisavailablein SOD-323HEPackage FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V 0 ?Lowpowerloss,highefficiency ?Foruseinlowvoltagehighfrequencyinverters, freewheeling, andpolarityprotection appl

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

MBR150F

SchottkyDiodes

■Features ●Lowpowerloss,highefficiency ●Highforwardsurgecurrentcapability ●TheplasticpackagecarriesUnderwritersLaboratoryFlammabilityClassification94V-0

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

MBR150G

AxialLeadRectifiers

TheMBR150/160seriesemploystheSchottkyBarrierprincipleinalargeareametal?to?siliconpowerdiode.State?of?the?artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow?voltage,high?frequencyinverters,free

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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