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MJD117

TRANSISTOR(PNP)

FS

First Silicon Co., Ltd

MJD117

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●LowCollector-EmitterSaturationVoltage ●ComplementarytoMJD112

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

MJD117

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION ?HighDCcurrentgain ?Built-inadamperdiodeatE-C ?Leadformedforsurfacemountapplications(NOsuffix) ?Straightlead(IPAK,“－I”suffix) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Designe

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD117

ComplementaryDarlingtonPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD117

SiliconPNPtransistorinaTO-252PlasticPackage.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features HighDCcurrentgain,built-inadamperdiodeatE-C,electricallysimilartopopularTIP117. Applications Mediumpowerswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

MJD117

COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS

COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposePowerandSwitchingApplications

CDIL

Continental Device India Limited

MJD117

iscSiliconPNPDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD117

SiliconPNPPowerTransistor

DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD117

SiliconPNPPowerTransistor

DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD117

ComplementaryDarlingtonPowerTransistorsDPAKForSurfaceMountApplications

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(“?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    MAX117EAI

  • 功能描述：

    模數(shù)轉(zhuǎn)換器 - ADC

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 通道數(shù)量：

    2

  • 結(jié)構(gòu)：

    Sigma-Delta

  • 轉(zhuǎn)換速率：

    125 SPs to 8 KSPs

  • 分辨率：

    24 bit

  • 輸入類型：

    Differential

  • 信噪比：

    107 dB

  • 接口類型：

    SPI

  • 工作電源電壓：

    1.7 V to 3.6 V, 2.7 V to 5.25 V

  • 最大工作溫度：

    + 85 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    VQFN-32

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MAX
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更多MAX117EAI供應(yīng)商 更新時(shí)間2025-7-25 15:07:00

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