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MAGX-002731-SB2PPR中文資料MA-COM數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠(chǎng)商型號(hào) |
MAGX-002731-SB2PPR |
| 功能描述 | GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10 Duty Cycle |
| 文件大小 |
375.93 Kbytes |
| 頁(yè)面數(shù)量 |
7 頁(yè) |
| 生產(chǎn)廠(chǎng)商 | MA-COM |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-9-6 11:06:00 |
| 人工找貨 | MAGX-002731-SB2PPR價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
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- MAGX-002731-100L00_15
- MAGX-002731-100L00
MAGX-002731-SB2PPR規(guī)格書(shū)詳情
Product Description
The MAGX-002731-100L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002731-100L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.
特性 Features
? GaN depletion mode HEMT microwave transistor
? Common source configuration
? Broadband Class AB operation
? Thermally enhanced Cu/Mo/Cu package
? RoHS Compliant
? +50V Typical Operation
? MTTF of 114 years (Channel Temperature
Application
? Civilian and Military Pulsed Radar
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