描述 Description

M/A-COM’s MAAP-007649-000100 2 watt power amplifier utilizes GaAs HBT technology with a +20 Volt BVceo process for improved linearity performance, power efficiency, and high reliability, in a low cost 4 mm PQFN surface mount plastic package.

The MAAP-007649-000100 incorporates an on-chip active bias network for ease of implementation, and maintains high linearity over temperature. The device operates from a single +7.5 volt supply and has a +4.5 volt reference pin for power down control capability.

The MAAP-007649-000100 has been optimized as a power amplifier for RFID Reader applications, but can also be used for infrastructure and industrial applications, since it provides consistent performance over the entire 800 to 1000 MHz band.

特性 Features

? HIGH Gain: 19 dB (TYP.)

? HIGH P1dB: +34.0 dBm (TYP.)

? HIGH OIP3: +49.5 dBm (TYP.)

? 50 PAE @ P1dB

? Optimized Performance for RFID Bands

? >1 watt Dense Reader Mode Spectral Mask Compliance

? On-Chip Active Bias Network

? Lead Free 4 mm PQFN Surface Mount Package

? 260°C Reflow Capability

Applications

? RFID Readers

? Cellular Infrastructure

? AMPS, ISM Applications

? Multi-Carrier Applications