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BD49L35G-TR

Marking：Ma；Package：SSOP3；Standard CMOS Voltage Detector IC

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

BZX84C30CC

Marking：MA；Package：SOT-23；350mW SURFACE MOUNT DUAL ZENER DIODE

?DualZenerDiodesinCommonCathode ?350mWPowerDissipation ?2.4V–75VNominalZenerVoltage ?5StandardVzTolerance ?DesignedforSurfaceMountApplication ?PlasticMaterial–ULRecognitionFlammability Classification94V-0

CEZ22V

Marking：MA；Package：ESC；Zener Diode Silicon Epitaxial Planar

Applications (1)Voltagesurgeprotection Features (1)Smallpackage (2)ThetypicalvoltageofVZisaccordedtoE24series.

D5V0X1BA2LPQ-7B

Marking：MA；Package：X1-DFN1006-2；5V ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features ?LowProfilePackage(0.53mmMax)andUltra-SmallPCBFootprintArea(1.08mmx0.68mmMax)SuitableforCompactPortableElectronics ?ProvidesESDProtectionperIEC61000-4-2Standard: Air±250kV,Contact±25kV ?OneChannelofESDProtection ?LowChannelInputCapacitance ?Tot

DMN16M0UCA6-7

Marking：MA；Package：X4-DSN2112-6；N-CHANNEL ENHANCEMENT MODE MOSFET

Features ?CSPwithFootprint2.11mm×1.18mm ?Height=0.11mmforLowProfile ?ESDProtectionofGate ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Forautomotiveapplicationsrequiringspecificchangecontrol (i.e.parts

HPZR-C26

Marking：MA；Package：CFP3；4.1 W high power voltage regulator diodes

1.Generaldescription HighpowervoltageregulatordiodesinaCFP3(SOD123W)smallandflatleadlow-profileSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤4.1W@Tsp=75°C,measuredzeroleadlength ?Toleranceseries:Approximatel

HPZR-C26-Q

Marking：MA；Package：CFP3；5.5 W high power voltage regulator diodes

1.Generaldescription HighpowervoltageregulatordiodesinaCFP3(SOD123W)smallandflatleadlow-profileSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤5.5W@Tsp=75°C,measuredzeroleadlength ?Toleranceseries:Approximately

IQDH45N04LM6CGSC

Marking：MA；Package：PG-WHTFN-9；MOSFET OptiMOS? 6 Power?Transistor, 40 V

Features ?N?channel,logiclevel ?Verylowon?resistanceRDS(on) ?Superiorthermalresistance ?Optimizeddesignfordoublesidecooling ?100%avalanchetested ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

LMBT3904TT1G

Marking：MA；Package：SC-89；General Purpose Transistors

FEATURE SimplifiesCircuitDesign. Wedeclarethatthematerialofproductcompliancewith RoHSrequirements. S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable.

LMBT3904TT3G

Marking：MA；Package：SC-89；General Purpose Transistors

FEATURE SimplifiesCircuitDesign. Wedeclarethatthematerialofproductcompliancewith RoHSrequirements. S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable.