M93S46屬于集成電路（IC）的存儲器。由意法半導體集團制造生產的M93S46存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

SUMMARY DESCRIPTION

This specification covers a range of 4K, 2K, 1K bit serial Electrically Erasable Programmable Memory (EEPROM) products (respectively for M93S66, M93S56, M93S46). In this text, these products are collectively referred to as M93Sx6. Figure 2. Logic Diagram and instructions used to set the memory protection. These are summarized in Table 2. and Table 3.).

A Read Data from Memory (READ) instruction loads the address of the first word to be read into an internal address pointer. The data contained at this address is then clocked out serially. The ad dress pointer is automatically incremented after the data is output and, if the Chip Select Input (S) is held High, the M93Sx6 can output a sequential stream of data words. In this way, the memory can be read as a data stream from 16 to 4096 bits (for the M93S66), or continuously as the address counter automatically rolls over to 00h when the highest address is reached.

Within the time required by a programming cycle (tW), up to 4 words may be written with help of the Page Write instruction. the whole memory may also be erased, or set to a predetermined pattern, by using the Write All instruction

FEATURES SUMMARY

■ Industry Standard MICROWIRE Bus

■ Single Supply Voltage:

– 4.5 to 5.5V for M93Sx6

– 2.5 to 5.5V for M93Sx6-W

– 1.8 to 5.5V for M93Sx6-R

■ Single Organization: by Word (x16)

■ Programming Instructions that work on: Word or Entire Memory

■ Self-timed Programming Cycle with Auto Erase

■ User Defined Write Protected Area

■ Page Write Mode (4 words)

■ Ready/Busy Signal During Programming

■ Speed:

– 1MHz Clock Rate, 10ms Write Time (Current product, identified by process identification letter F or M)

– 2MHz Clock Rate, 5ms Write Time (New Product, identified by process identification letter W or G)

■ Sequential Read Operation

■ Enhanced ESD/Latch-Up Behavior

■ More than 1 Million Erase/Write Cycles

■ More than 40 Year Data Retention