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首頁>M93S46-MN3>規(guī)格書詳情

M93S46-MN3中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

M93S46-MN3
廠商型號

M93S46-MN3

功能描述

4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection

文件大小

525.45 Kbytes

頁面數(shù)量

34

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導體

中文名稱

意法半導體集團官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-7-24 10:24:00

人工找貨

M93S46-MN3價格和庫存,歡迎聯(lián)系客服免費人工找貨

M93S46-MN3規(guī)格書詳情

SUMMARY DESCRIPTION

This specification covers a range of 4K, 2K, 1K bit serial Electrically Erasable Programmable Memory (EEPROM) products (respectively for M93S66, M93S56, M93S46). In this text, these products are collectively referred to as M93Sx6. Figure 2. Logic Diagram and instructions used to set the memory protection. These are summarized in Table 2. and Table 3.).

A Read Data from Memory (READ) instruction loads the address of the first word to be read into an internal address pointer. The data contained at this address is then clocked out serially. The ad dress pointer is automatically incremented after the data is output and, if the Chip Select Input (S) is held High, the M93Sx6 can output a sequential stream of data words. In this way, the memory can be read as a data stream from 16 to 4096 bits (for the M93S66), or continuously as the address counter automatically rolls over to 00h when the highest address is reached.

Within the time required by a programming cycle (tW), up to 4 words may be written with help of the Page Write instruction. the whole memory may also be erased, or set to a predetermined pattern, by using the Write All instruction

FEATURES SUMMARY

■ Industry Standard MICROWIRE Bus

■ Single Supply Voltage:

– 4.5 to 5.5V for M93Sx6

– 2.5 to 5.5V for M93Sx6-W

– 1.8 to 5.5V for M93Sx6-R

■ Single Organization: by Word (x16)

■ Programming Instructions that work on: Word or Entire Memory

■ Self-timed Programming Cycle with Auto Erase

■ User Defined Write Protected Area

■ Page Write Mode (4 words)

■ Ready/Busy Signal During Programming

■ Speed:

– 1MHz Clock Rate, 10ms Write Time (Current product, identified by process identification letter F or M)

– 2MHz Clock Rate, 5ms Write Time (New Product, identified by process identification letter W or G)

■ Sequential Read Operation

■ Enhanced ESD/Latch-Up Behavior

■ More than 1 Million Erase/Write Cycles

■ More than 40 Year Data Retention

供應商 型號 品牌 批號 封裝 庫存 備注 價格
ST
24+
SOP-8
3200
十年品牌!原裝現(xiàn)貨!!!
詢價
ST
20+
SOP8
2960
誠信交易大量庫存現(xiàn)貨
詢價
ST/意法
24+
SOP8
9600
原裝現(xiàn)貨,優(yōu)勢供應,支持實單!
詢價
22+
NA
3000
加我QQ或微信咨詢更多詳細信息,
詢價
ST
24+
SOP8
9860
原裝現(xiàn)貨/放心購買
詢價
ST
24+
SOP-8
1500
詢價
ST
23+
SO-8
38000
正品原裝貨價格低
詢價
ST/意法
25+
SOP8
6000
只做原裝
詢價
ST
25+23+
SOP8
10978
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
ST/意法
23+
SOP8
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價