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M5M5256DRV-70LL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DRV-70VLL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DRV-70VLL-I

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DRV-70VLL-W

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DRV-70VXL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DRV-70VXL-I

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M5256DRV-70XL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

供應商型號品牌批號封裝庫存備注價格
MIT
05+
原廠原裝
4326
只做全新原裝真實現(xiàn)貨供應
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MIT
24+
SSMD
3000
公司存貨
 詢價
MITSUBISHI
24+
TSSOP-28
4650
詢價
MITSUBISHI
23+
NA
25060
只做進口原裝,終端工廠免費送樣
 詢價
MIT
23+
TSSOP
50000
全新原裝正品現(xiàn)貨,支持訂貨
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MIT
24+
NA/
10
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
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MIT
2025+
TSSOP
3750
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
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RENESAS
1802+
TSSOP
6528
只做原裝正品現(xiàn)貨,或訂貨假一賠十!
 詢價
RENESAS/瑞薩
23+
TSSOP
30000
原裝現(xiàn)貨,假一賠十.
 詢價
RENESAS/瑞薩
23+
TSSOP
8000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
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更多M5M5256DRV-70LL供應商 更新時間2025-7-25 15:07:00

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