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首頁>M50FLW040BN5>規(guī)格書詳情

M50FLW040BN5集成電路(IC)的存儲(chǔ)器規(guī)格書PDF中文資料

M50FLW040BN5
廠商型號(hào)

M50FLW040BN5

參數(shù)屬性

M50FLW040BN5 封裝/外殼為40-TFSOP(0.724",18.40mm 寬);包裝為托盤;類別為集成電路(IC)的存儲(chǔ)器;產(chǎn)品描述:IC FLASH 4MBIT PARALLEL 40TSOP

功能描述

4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory

封裝外殼

40-TFSOP(0.724",18.40mm 寬)

文件大小

857.2 Kbytes

頁面數(shù)量

52

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
STMICROELECTRONICS
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-3 8:55:00

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M50FLW040BN5規(guī)格書詳情

Summary description

The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply can be used to reduce the erasing and programming time.

The memory is divided into 8 Uniform Blocks of 64 KBytes each, three of which are divided into 16 uniform sectors of 4 KBytes each (see Appendix A for details). All blocks and sectors can be erased independently. So, it is possible to preserve valid data while old data is erased. Blocks can be protected individually to prevent accidental program or erase commands from modifying their contents.

Program and erase commands are written to the Command Interface of the memory. An on chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set to control the memory is consistent with the JEDEC standards.

Feature summary

■ Flash memory

– Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1) used in PC BIOS applications

– 5 Signal Communication Interface supporting Read and Write Operations

– 5 Additional General Purpose Inputs for platform design flexibility

– Synchronized with 33MHz PCI clock

■ 8 blocks of 64 Kbytes

– 5 blocks of 64 KBytes each

– 3 blocks, subdivided into 16 uniform sectors of 4 KBytes each

Two blocks at the top and one at the bottom (M50FLW040A)

One block at the top and two at the bottom (M50FLW040B)

■ Enhanced security

– Hardware Write Protect Pins for Block Protection

– Register-based Read and Write Protection

■ Supply voltage

– VCC = 3 to 3.6V for Program, Erase and Read Operations

– VPP = 12V for Fast Program and Erase

■ Two interfaces

– Auto Detection of Firmware Hub (FWH) or Low Pin Count (LPC) Memory Cycles for Embedded Operation with PC Chipsets

– Address/Address Multiplexed (A/A Mux) Interface for programming equipment compatibility.

■ Programming time: 10 μs typical

■ Program/Erase Controller

– Embedded Program and Erase algorithms

– Status Register Bits

■ Program/Erase Suspend

– Read other Blocks/Sectors during Program Suspend

– Program other Blocks/Sectors during Erase Suspend

■ Electronic signature

– Manufacturer Code: 20h

– Device Code (M50FLW040A): 08h

– Device Code (M50FLW040B): 28h

■ Packages

– ECOPACK? (RoHS compliant)

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    M50FLW040BN5G

  • 制造商:

    Micron Technology Inc.

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    托盤

  • 存儲(chǔ)器類型:

    非易失

  • 存儲(chǔ)器格式:

    閃存

  • 技術(shù):

    FLASH - NOR

  • 存儲(chǔ)容量:

    4Mb(512K x 8)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 電壓 - 供電:

    3V ~ 3.6V

  • 工作溫度:

    -20°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    40-TFSOP(0.724",18.40mm 寬)

  • 供應(yīng)商器件封裝:

    40-TSOP

  • 描述:

    IC FLASH 4MBIT PARALLEL 40TSOP

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
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320
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