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M470T6554BGZ0-CD5/CC中文資料三星數(shù)據(jù)手冊PDF規(guī)格書
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M470T6554BGZ0-CD5/CC規(guī)格書詳情
特性 Features
? Performance range
? JEDEC standard 1.8V ± 0.1V Power Supply
? VDDQ = 1.8V ± 0.1V
? 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin
? 4 Banks
? Posted CAS
? Programmable CAS Latency: 3, 4, 5
? Programmable Additive Latency: 0, 1 , 2 , 3 and 4
? Write Latency(WL) = Read Latency(RL) -1
? Burst Length: 4 , 8(Interleave/nibble sequential)
? Programmable Sequential / Interleave Burst Mode
? Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
? Off-Chip Driver(OCD) Impedance Adjustment
? On Die Termination
? Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
- support High Temperature Self-Refresh rate enable feature
? Package: 60ball FBGA - 64Mx8 , 84ball FBGA - 32Mx16
? All of Lead-free products are compliant for RoHS
產(chǎn)品屬性
- 型號：
M470T6554BGZ0-CD5/CC
- 制造商：
SAMSUNG
- 制造商全稱：
Samsung semiconductor
- 功能描述：
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
MREL/麥瑞 |
24+ |
NA/ |
6184 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
SAMSUNG(三星半導(dǎo)體) |
24+ |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | |||
SMART |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價 | |||
MICRON |
1844+ |
BGA |
6528 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
SAMSUNG/三星 |
25+ |
BGA |
996880 |
只做原裝,歡迎來電資詢 |
詢價 | ||
SAMSUNG/三星 |
23+ |
NA |
3000 |
只做原裝正品價格和數(shù)量以咨詢?yōu)闇?zhǔn) |
詢價 | ||
SAMSUNG |
22+ |
252 |
原裝現(xiàn)貨,假一罰十 |
詢價 | |||
OKI |
24+ |
2300 |
詢價 | ||||
N/A |
2447 |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
SMART |
0644 |
DDR2SO-DIMM/512MBDDR2SO/ |
238 |
原裝香港現(xiàn)貨真實庫存。低價 |
詢價 |
