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首頁(yè)>M45PE80-VMN6G>規(guī)格書(shū)詳情

M45PE80-VMN6G中文資料NUMONYX數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

M45PE80-VMN6G
廠商型號(hào)

M45PE80-VMN6G

功能描述

8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

文件大小

911.79 Kbytes

頁(yè)面數(shù)量

47 頁(yè)

生產(chǎn)廠商

NUMONYX numonyx

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-8-13 8:26:00

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M45PE80-VMN6G規(guī)格書(shū)詳情

Summary description

The M45PE80 is a 8 Mbit (1 Mbit × 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus.

The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle.

The memory is organized as 16 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 4096 pages, or 1 048 576 bytes.

特性 Features

■ SPI bus compatible serial interface

■ 50 MHz clock rate (maximum)

■ 2.7 V to 3.6 V single supply voltage

■ 8 Mbit of Page-Erasable Flash memory

■ Page size: 256 bytes:

– Page Write in 11 ms (typical)

– Page Program in 0.8 ms (typical)

– Page Erase in 10 ms (typical)

■ Sector Erase (64 Kbytes)

■ Hardware Write protection of the bottom sector (64 Kbytes)

■ Electronic signature

– JEDEC standard two-byte signature (4014h)

■ Deep Power-down mode 1 μA (typical)

■ More than 100 000 Write cycles

■ More than 20 years’ data retention

■ Packages

– ECOPACK? (RoHS compliant)

產(chǎn)品屬性

  • 型號(hào):

    M45PE80-VMN6G

  • 制造商:

    NUMONYX

  • 制造商全稱(chēng):

    Numonyx B.V

  • 功能描述:

    8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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