描述 Description

The M34F04 is an electrically erasable programmable memory (EEPROM), organized as 512 x 8. The upper half (1FFh to 100h) of the memory array can be protected from inadvertent write operations by driving High the WCpin.

特性 Features

? Two-wire I2C serial interface supports
? 400 kHz protocol
? Single supply voltage
? 2.5 to 5.5 V
? Write control of the top half of memory (addresses 100h to 1FFh)
? Byte and Page Write (up to 16 Bytes)
? Random and Sequential Read modes
? Self-timed programming cycle
? Automatic address incrementing
? Enhanced ESD/latch-up behavior
? More than 1 million erase/write cycles
? More than 40 year data retention
? Package
? SO8 ECOPACK?2

簡(jiǎn)介

M34F04屬于集成電路（IC）的存儲(chǔ)器。由制造生產(chǎn)的M34F04存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性?xún)煞N，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線(xiàn)、SPI、UFS、Xccela 總線(xiàn)和 1-線(xiàn)。