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首頁(yè)>M29F400BT-70N1T>規(guī)格書詳情

M29F400BT-70N1T中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

M29F400BT-70N1T
廠商型號(hào)

M29F400BT-70N1T

功能描述

4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory

文件大小

208.64 Kbytes

頁(yè)面數(shù)量

22 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-7-23 23:00:00

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M29F400BT-70N1T規(guī)格書詳情

Description

The M29F400B is a 4 Mbit (512 Kb x8 or 256 Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F400B is fully backward compatible with the M29F400.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Features

■ Single 5 V ± 10 supply voltage for program, erase and read operations

■ Access time: 45 ns

■ Programming time

– 8 μs per Byte/Word typical

■ 11 memory blocks

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 8 Main Blocks

■ Program/erase controller

– Embedded Byte/Word Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

– Ready/Busy Output Pin

■ Erase Suspend and Resume modes

– Read and Program another Block during Erase Suspend

■ Unlock Bypass Program command

– Faster Production/Batch Programming

■ Temporary block unprotection mode

■ Low power consumption

– Standby and Automatic Standby

■ 100,000 program/erase cycles per block

■ 20-year data retention

– Defectivity below 1 ppm/year

■ Electronic signature

– Manufacturer Code: 0020h

– Top Device Code M29F400BT: 00D5h

– Bottom Device Code M29F400BB: 00D6h

■ ECOPACK? packages available

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ST/意法
24+
NA/
3412
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23+
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20000
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25+
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65248
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1948+
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6852
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23+
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50000
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ST
2015+
SOP/DIP
19889
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04+
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162
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20+
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2960
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1824+
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3211
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23+
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30000
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