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首頁>M29F016B70N1T>規(guī)格書詳情

M29F016B70N1T中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

M29F016B70N1T
廠商型號

M29F016B70N1T

功能描述

16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory

文件大小

135.99 Kbytes

頁面數(shù)量

22

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-6 14:58:00

人工找貨

M29F016B70N1T價格和庫存,歡迎聯(lián)系客服免費人工找貨

M29F016B70N1T規(guī)格書詳情

SUMMARY DESCRIPTION

The M29F016B is a 16 Mbit (2Mb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

■ SINGLE 5V±10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 55ns

■ PROGRAMMING TIME

– 8μs by Byte typical

■ 32 UNIFORM 64 Kbyte MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

– Ready/Busy Output Pin

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ TEMPORARY BLOCK UNPROTECTION MODE

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: ADh

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