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首頁>M29F010B45N6E>規(guī)格書詳情

M29F010B45N6E中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

M29F010B45N6E
廠商型號

M29F010B45N6E

功能描述

1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory

文件大小

402.96 Kbytes

頁面數(shù)量

20

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導體

中文名稱

意法半導體集團官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-7-28 17:07:00

人工找貨

M29F010B45N6E價格和庫存,歡迎聯(lián)系客服免費人工找貨

M29F010B45N6E規(guī)格書詳情

SUMMARY DESCRIPTION

The M29F010B is a 1 Mbit (128Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

■ SINGLE 5V±10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45 ns

■ PROGRAMMING TIME

– 8 μs per Byte typical

■ 8 UNIFORM 16 KBytes MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 20h

■ ECOPACK? PACKAGES AVAILABLE

供應商 型號 品牌 批號 封裝 庫存 備注 價格
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