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M28F256-10C6TR中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
M28F256-10C6TR |
| 功能描述 | 512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
| 文件大小 |
523.409 Kbytes |
| 頁面數(shù)量 |
20 頁 |
| 生產(chǎn)廠商 | STMICROELECTRONICS |
| 中文名稱 | 意法半導(dǎo)體 |
| 網(wǎng)址 | |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-8-7 14:31:00 |
| 人工找貨 | M28F256-10C6TR價(jià)格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
M28F256-10C6TR規(guī)格書詳情
DESCRIPTION
The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F512 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 90ns makes the device suitable for use in high speed microprocessor systems.
■ FAST ACCESS TIME: 90ns
■ LOW POWER CONSUMPTION
– Standby Current: 100μA Max
■ 10,000 ERASE/PROGRAM CYCLES
■ 12V PROGRAMMING VOLTAGE
■ TYPICAL BYTE PROGRAMING TIME 10μs (PRESTO F ALGORITHM)
■ ELECTRICAL CHIP ERASE in 1s RANGE
■ INTEGRATED ERASE/PROGRAM-STOP TIMER
■ EXTENDED TEMPERATURE RANGES
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
STM |
2022 |
DIP |
5200 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
AMD |
24+ |
DIP-24 |
5000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價(jià) | ||
STM |
9944 |
9 |
公司優(yōu)勢(shì)庫存 熱賣中! |
詢價(jià) | |||
ST |
23+ |
DIP-32 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
ST |
22+ |
PLCC |
3000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
ST |
24+ |
9850 |
公司原裝現(xiàn)貨/隨時(shí)可以發(fā)貨 |
詢價(jià) | |||
INTERSIL |
16+ |
DIP-28 |
1200 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
ST |
23+ |
PLCC-32 |
9526 |
詢價(jià) | |||
ST |
2020+ |
DIP-32 |
43 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
ST |
1902+ |
PLCC32 |
2734 |
代理品牌 |
詢價(jià) |
