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M28F101-90N1中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
M28F101-90N1規(guī)格書詳情
DESCRIPTION
The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the
chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
特性 Features
? 5V±10 SUPPLY VOLTAGE
? 12V PROGRAMMING VOLTAGE
? FAST ACCESS TIME: 70ns
? BYTE PROGRAMING TIME: 10μs typical
? ELECTRICAL CHIP ERASE in 1s RANGE
? LOW POWER CONSUMPTION
– Stand-by Current: 100μA max
? 10,000 ERASE/PROGRAM CYCLES
? INTEGRATED ERASE/PROGRAM-STOP TIMER
? OTP COMPATIBLE PACKAGES and PINOUTS
? ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 07h
產(chǎn)品屬性
- 型號：
M28F101-90N1
- 制造商：
STMICROELECTRONICS
- 制造商全稱：
STMicroelectronics
- 功能描述：
1 Mb 128K x 8, Chip Erase FLASH MEMORY
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
STM |
2016+ |
TSSOP40 |
9000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
ST |
23+ |
PLCC44 |
20000 |
全新原裝假一賠十 |
詢價 | ||
STM |
2016+ |
TSSOP40 |
6523 |
只做進(jìn)口原裝現(xiàn)貨!假一賠十! |
詢價 | ||
ST |
PLCC44 |
97+ |
49 |
全新原裝進(jìn)口自己庫存優(yōu)勢 |
詢價 | ||
ST |
17+ |
PLCC44 |
9988 |
只做原裝進(jìn)口,自己庫存 |
詢價 | ||
ST |
23+ |
PLCC44 |
9526 |
詢價 | |||
STM |
12+ |
NA |
100 |
終端備貨原裝現(xiàn)貨-軍工器件供應(yīng)商 |
詢價 | ||
ST |
24+ |
9850 |
公司原裝現(xiàn)貨/隨時可以發(fā)貨 |
詢價 | |||
ST |
23+ |
TSOP-32 |
16900 |
正規(guī)渠道,只有原裝! |
詢價 | ||
SGS |
05+ |
原廠原裝 |
4435 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 |
