M24C64-R屬于集成電路（IC）的存儲器。由意法半導體集團制造生產(chǎn)的M24C64-R存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

描述 Description

The M24C64 is a 64-Kbit I2C-compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 8 K × 8 bits.

Over an ambient temperature range of -40 °C / +85 °C, the M24C64-W can operate with a supply voltage from 2.5 V to 5.5 V, the M24C64-R can operate with a supply voltage from 1.8 V to 5.5 V, and the M24C64-F and M24C64-DF can operate with a supply voltage from 1.7 V to 5.5 V ( the M24C64-F can also operate down to 1.6 V, under some restricting conditions).

The M24C64-D offers an additional page, named the Identification Page (32 bytes). The Identification Page can be used to store sensitive application parameters which can be (later) permanently locked in Read-only mode.

特性 Features

? Compatible with all I2C bus modes:

– 1 MHz

– 400 kHz

– 100 kHz

? Memory array:

– 64 Kbit (8 Kbytes) of EEPROM

– Page size: 32 bytes

– Additional Write lockable page (M24C64-D order codes)

? Single supply voltage:

– 1.7 V to 5.5 V over –40 °C / +85 °C

– 1.6 V to 5.5 V over 0 °C / +85 °C

? Write:

– Byte Write within 5 ms

– Page Write within 5 ms

? Random and sequential Read modes

? Write protect of the whole memory array

? Enhanced ESD/Latch-Up protection

? More than 4 million Write cycles

? More than 200-year data retention