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MA10100

Siliconepitaxialplanartype

Siliconepitaxialplanartype Forswitchingcircuits ■Features ?Highbreakdownvoltage:VR=200V ?SmallterminalcapacitanceCt

PanasonicPanasonic Semiconductor

松下松下電器

MAT10100

AttenuatorDIE

MA-COM

M/A-COM Technology Solutions, Inc.

MBR10100

SWITCHMODE??PowerRectifiers

SCHOTTKYBARRIERRECTIFIERS10AMPERES60to100VOLTS ...usingtheSchottkyBarrierprinciplewithaplatinumbarriermetal.These state–of–the–artdeviceshavethefollowingfeatures: ?Guard–RingforStressProtection ?LowForwardVoltage ?150°COperatingJunctionTemperature ?Guara

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MBR10100

10.0AMPS.SchottkyBarrierRectifiers

FEATURES -Lowpowerloss,highefficiency -Guardringforovervoltageprotection -Highsurgecurrentcapability -ComplianttoRoHSDirective2011/65/EUandinaccordancetoWEEE2002/96/EC -Halogen-freeaccordingtoIEC61249-2-21definition

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

MBR10100

HighVoltageSchottkyRectifiers

FEATURES ?TrenchMOSSchottkytechnology ?Lowerpowerlosses,highefficiency ?Lowforwardvoltagedrop ?Highforwardsurgecapability ?Highfrequencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum

VishayVishay Siliconix

威世科技威世科技半導體

MBR10100

SWITCHMODEPowerRectifiers

SWITCHMODE?PowerRectifiers ThisseriesofSWITCHMODEpowerrectifiersusestheSchottkyBarrierprinciplewithaplatinumbarriermetal.Thesestate?of?the?artdeviceshavethefollowingfeatures: Features ?Guard?RingforStressProtection ?LowForwardVoltage ?175°COperatingJunctionT

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MBR10100

SCHOTTKYBARRIERRECTIFIER

FEATURE ?SchottkyBarrierChip ?GuardRingDieConstructionforTransientProtection ?LowPowerLoss,HighEfficiency ?HighSurgeCapability ?HighCurrentCapabilityandLowForwardVoltageDrop ?ForUseinLowVoltage,HighFrequencyInverters,FreeWheeling.andPolarityProtectionA

TELTokyo Electron Ltd.

東電電子東京電子有限公司

MBR10100

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,freewhelling,andpolarityprotectionapplica

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR10100

10.0AMPS.SchottkyBarrierRectifiers

TSCTaiwan Semiconductor Company, Ltd

臺灣半導體臺灣半導體股份有限公司

MBR10100

High-VoltageSchottkyRectifier

FEATURES ?TrenchMOSSchottkytechnology ?Lowerpowerlosses,highefficiency ?Lowforwardvoltagedrop ?Highforwardsurgecapability ?Highfrequencyoperation ?MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) ?Solderbathtemperature275°Cmaximum

VishayVishay Siliconix

威世科技威世科技半導體

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