零件型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
LX5503 | InGaP HBT 5-6GHz Power Amplifier TheLX5503isapoweramplifieroptimizedfortheFCCUnlicensedNationalInformationInfrastructure(U-NII)bandandHiperLAN2applicationsinthe5.15-5.85GHzfrequencyrange.ThePAisimplementedasatwo-stagemonolithic microwaveintegratedcircuit(MMIC)withactivebiasandinput/output | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
LX5503 | Legacy Power Management; Key Features:Advanced InGaP HBT5.15-5.85GHz OperationSingle-Polarity 3.3V SupplyLow Quiescent Current Icq ~100mAP1dB ~ +25dBm across 5.15~5.85GHzPower Gain ~ 22dB at 5.25GHz & Pout=18dBmPower Gain ~ 18dB at 5.85GHz & Pout=18dBmTotal Current | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | |
LX5503 | InGaP HBT 5-6GHz Power Amplifier | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
InGaP HBT 4 - 6GHz Power Amplifier TheLX5503Eisapoweramplifieroptimizedforhigh-efficiencylowpowerapplicationsintheFCCUnlicensedNationalInformationInfrastructure(U-NII)band,EuropeHyperLAN2,andJapanWLANinthe4.9-5.85GHzfrequencyrange.ThePAisimplementedasatwo-stagemonolithicmicrowaveintegratedci | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
InGaP HBT 4 - 6GHz Power Amplifier TheLX5503Eisapoweramplifieroptimizedforhigh-efficiencylowpowerapplicationsintheFCCUnlicensedNationalInformationInfrastructure(U-NII)band,EuropeHyperLAN2,andJapanWLANinthe4.9-5.85GHzfrequencyrange.ThePAisimplementedasatwo-stagemonolithicmicrowaveintegratedci | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
WLAN Power Amplifiers (PA); For new designs consider the LX5530LQ.The LX5503E is a power amplifier optimized for high-efficiency low power applications in the FCC Unlicensed National Information Infrastructure (U-NII) band, Europe HyperLAN2, and Japan WLAN in the 4.9-5.85GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single supply of 3.3V with +26dBm of P1dB, and power gain of 21dB between 4.9-5.35GHz and 16dB up to 5.85GHz. For +18dBm OFDM output power (64QAM, 54Mbps), the PA provides a very low EVM (Error Vector Magnitude) of 3%, and consumes 150mA total DC current. The LX5503E is available in a 16-pin 3x3mm2 micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the micro-lead package make the LX5503E an ideal solution for broadband, medium-gain power amplifier requirements for IEEE 802.11a, and HiperLAN2 portable WLAN applications.??ROHS, PB Free | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
WLAN Power Amplifiers (PA); ·Advanced InGaP HBT\n·5.15-5.85GHz Operation\n·Single-Polarity 3.3V Supply\n·Low Quiescent Current Icq ~100mA\n·P1dB ~ +25dBm across 5.15~5.85GHz\n·Power Gain ~ 22dB at 5.25GHz & Pout=18dBm\n·Power Gain ~ 18dB at 5.85GHz & Pout=18dBm\n·Total Current < 200mA for Pout=18dBm EVM ~ 4% for 64QAM/ 54Mbps & Pout=18dBm\n·Excellent Temperature Performance\n·Simple Input/Output Match\n·Minimal External Components\n·Small Footprint: 3x3mm2\n·Low Profile: 0.9mm\n ROHS, PB Free; For new designs consider the LX5530LQ.The LX5503 is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band and HiperLAN2 applications in the 5.15-5.85GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with +25dBm of P1dB and 22dB power gain between 5.15-5.35GHz and 18dB gain up to 5.85GHz. For +18dBm OFDM output power (64QAM, 54Mbps), the PA provides a very low EVM (Error-Vector Magnitude) of 4%, and consumes less than 200mA total DC current.The LX5503 is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5503 an ideal solution for broadband, medium-gain power amplifier requirements for IEEE 802.11a, and Hiperlan2 portable WLAN applications. | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
InGaP HBT 5-6GHz Power Amplifier TheLX5503isapoweramplifieroptimizedfortheFCCUnlicensedNationalInformationInfrastructure(U-NII)bandandHiperLAN2applicationsinthe5.15-5.85GHzfrequencyrange.ThePAisimplementedasatwo-stagemonolithic microwaveintegratedcircuit(MMIC)withactivebiasandinput/output | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
InGaP HBT 5-6GHz Power Amplifier | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
InGaP HBT 5-6GHz Power Amplifier | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
詳細(xì)參數(shù)
- 型號(hào):
LX5503
- 制造商:
MICROSEMI
- 制造商全稱(chēng):
Microsemi Corporation
- 功能描述:
InGaP HBT 5-6GHz Power Amplifier
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
MSC |
24+ |
QFN-20 |
16000 |
詢(xún)價(jià) | |||
Microsemi |
25+ |
QFN16 |
3200 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷(xiāo)售! |
詢(xún)價(jià) | ||
MSC |
23+ |
QFN |
13000 |
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢(xún)價(jià) | ||
MSC |
25+ |
QFN-16 |
2374 |
福安甌為您提供真芯庫(kù)存,真誠(chéng)服務(wù) |
詢(xún)價(jià) | ||
Microsemi |
24+ |
QFN-16 |
2560 |
絕對(duì)原裝!現(xiàn)貨熱賣(mài)! |
詢(xún)價(jià) | ||
Microse |
2020+ |
QFN |
7947 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢(xún)價(jià) | ||
Microsemi |
24+ |
MLP |
4652 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存! |
詢(xún)價(jià) | ||
Microsemi |
24+ |
QFN |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢(xún)價(jià) | ||
MSC |
17+ |
QFN |
9700 |
只做全新進(jìn)口原裝,現(xiàn)貨庫(kù)存 |
詢(xún)價(jià) | ||
MICROSEMI |
05+PB |
QFN |
2500 |
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢(xún) |
詢(xún)價(jià) |
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