LPV1500中文資料FILTRONIC數(shù)據(jù)手冊PDF規(guī)格書
LPV1500規(guī)格書詳情
DESCRIPTION AND APPLICATIONS
The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High
Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 μm by 1500 μm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1V500 also features Si3N4 passivation and is available in a flanged ceramic package (P100). The LPV1500 features plated source thru-vias for improved performance.
FEATURES
? +31.5 dBm Typical Power at 18 GHz
? 8.5 dB Typical Power Gain at 18 GHz
? +27 dBm at 3.3V Battery Voltage
? +45 dBm Typical Intercept Point
? 50 Power-Added-Efficiency at 18 GHz
? Plated Source Thru-Vias
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
BOURNS/伯恩斯 |
12+ |
DIP |
61800 |
詢價 | |||
BOURNS/伯恩斯 |
15+ROHS |
DIP |
493900 |
一級質(zhì)量長期可供應量大價格從優(yōu) |
詢價 | ||
POWER SUPPLY |
21 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | ||||
KEXIN/科信 |
23+ |
SMD DIP |
13000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
Bourns Inc. |
25+ |
徑向 垂直圓柱 |
9350 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
MW 臺灣明緯 |
2021+ |
- |
509 |
詢價 | |||
FILTRONIC |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
Mean |
1931+ |
N/A |
567 |
加我qq或微信，了解更多詳細信息,體驗一站式購物 |
詢價 | ||
Bourns |
22+ |
NA |
5889 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
MEANWELL |
1000 |
詢價 |
