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MBR6035PT

60.0AMPS.SchottkyBarrierRectifiers

FEATURES -Lowpowerloss,highefficiency -Guardringforovervoltageprotection -Highsurgecurrentcapability -ULRecognizedFile#E-326243 -ComplianttoRoHSDirective2011/65/EUand inaccordancetoWEEE2002/96/EC -Halogen-freeaccordingtoIEC61249-2-21definition

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

MBR6035PT

60AMPERESSCHOTTKYBARRIERRECTIFIERS

VOLTAGE20to100VoltsCURRENT60Amperes FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O. FlameRetardantEpoxyMoldingCompound. ?Metalsiliconjunction,majoritycarrierconduction ?Lowpowerloss,highefficiency. ?Highcurrentcapabili

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

MBR6035PT

60ASCHOTTKYBARRIERRECTIFIER

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

MBR6035PT

SCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE:30-100VCURRENT:60A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guardr

DSK

Diode Semiconductor Korea

MBR6035PT

DualCommonCathodeSchottkyRectifier

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

MBR6035R

SCHOTTKYDIODESSTUDTYPE60A

TELTokyo Electron Ltd.

東電電子東京電子有限公司

MBR6035R

SchottkyPowerDiode,60A

Features ?FastSwitching ?Lowforwardvoltagedrop ?Highsurgecapability ?Highefficiency,lowpowerloss ?NormalandReversepolarity

NAINA

Naina Semiconductor ltd.

MBR6035R

SCHOTTKYDIODESSTUDTYPE60A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MBR6035R

SiliconPowerSchottkyDiode

GENESIC

GeneSiC Semiconductor, Inc.

MMM6035

Quad-BandGSM/GPRSPAModulewithIntegratedPowerControl

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

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19889
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