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LM2105

LM2105 105-V, 0.5-A/0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr

LM2105

LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr

LM2105

LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrent

LM2105

具有 5V UVLO 和集成式自舉二極管的 107V、0.5A/0.8A 半橋柵極驅(qū)動器; ? Drives two N-channel MOSFETs in half-bridge configuration\n? Integrated bootstrap diode\n? 5-V typical undervoltage lockout on GVDD\n? 105-V maximum recommended voltage on BST\n? –19.5-V absolute maximum negative transient voltage handling on SH\n? 0.5-A/0.8-A peak source/sink currents\n? 125-ns typical propagation delay\n? 4-ns typical delay matching;

LM2105 是一款緊湊型高壓柵極驅(qū)動器，專為驅(qū)動采用同步降壓或半橋配置的高側(cè)和低側(cè) N 溝道 MOSFET 而設(shè)計。 集成的自舉二極管無需使用外部分立式二極管，從而節(jié)省布板空間并降低系統(tǒng)成本。\n\nSH 引腳具有–1V 直流和 –19.5V 瞬態(tài)負電壓處理能力，可提升高噪聲應(yīng)用中的系統(tǒng)穩(wěn)健性。 該器件采用小型熱增強型 8 引腳 WSON 封裝，可將驅(qū)動器放置在更靠近電機相位的位置，從而改善 PCB 布局。 LM2105 還采用與業(yè)界通用引腳排列兼容的 8 引腳 SOIC 封裝。在低側(cè)和高側(cè)電源軌上均提供欠壓鎖定 (UVLO) 功能，以在上電和斷電期間提供保護。

LM2105_V01

LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr

LM2105_V02

LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrent

LM2105DR

絲?。?strong>LM2105；Package：SOIC；LM2105 105-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr

LM2105DR

絲?。?strong>LM2105；Package：SOIC；LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrent

LM2105DSGR

絲印：L105；Package：WSON；LM2105 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrent