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LM2101

具有 8V UVLO 的 107V、0.5A/0.8A 半橋柵極驅(qū)動(dòng)器; ? Drives two N-channel MOSFETs in half-bridge configuration\n? 8-V typical undervoltage lockout on GVDD\n? 107-V absolute maximum voltage on BST\n? –19.5-V absolute maximum negative transient voltage handling on SH\n? 0.5-A/0.8-A peak source/sink currents\n? 115-ns typical propagation delay;

LM2101 是一款緊湊型高壓柵極驅(qū)動(dòng)器，專為驅(qū)動(dòng)采用同步降壓或半橋配置的高側(cè)和低側(cè) N 溝道 MOSFET 而設(shè)計(jì)。 \n\nSH 引腳具有–1V 直流和 –19.5V 瞬態(tài)負(fù)電壓處理能力，可提升高噪聲應(yīng)用中的系統(tǒng)穩(wěn)健性。 該器件采用小型熱增強(qiáng)型 8 引腳 WSON 封裝，可將驅(qū)動(dòng)器放置在更靠近電機(jī)相位的位置，從而改善 PCB 布局。 LM2101 還采用與業(yè)界通用引腳排列兼容的 8 引腳 SOIC 封裝。在低側(cè)和高側(cè)電源軌上均提供欠壓鎖定 (UVLO) 功能，以在上電和斷電期間提供保護(hù)。

LM2101

LM2101 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?8-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrents ?115-nstypicalpropagatio

LM2101DR

絲?。?a target="_blank" title="Marking" href="/l2101d/marking.html">L2101D；Package：SOIC；LM2101 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?8-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrents ?115-nstypicalpropagatio

LM2101DSGR

絲印：L101；Package：WSON；LM2101 107-V, 0.5-A, 0.8-A Half-Bridge Driver with 8-V UVLO

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?8-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrents ?115-nstypicalpropagatio

LM211DR

TI
SOP8