The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at VCC=2.7V-3.6V. Its low voltage operation capability greatly extends battery life for portable applications.

32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY

■ 32M density with 16Bit I/O Interface

■ High Performance Reads

? 60/25ns 8-Word Page Mode

■ Configurative 4-Plane Dual Work

? Flexible Partitioning

? Read operations during Block Erase or (Page Buffer) Program

? Status Register for Each Partition

■ Low Power Operation

? 2.7V Read and Write Operations

? Automatic Power Savings Mode Reduces ICCR in Static Mode

■ Enhanced Code + Data Storage

? 5μs Typical Erase/Program Suspends

■ OTP (One Time Program) Block

? 4-Word Factory-Programmed Area

? 4-Word User-Programmable Area

■ High Performance Program with Page Buffer

? 16-Word Page Buffer

? 5μs/Word (Typ.) at 12V WP#/ACC

■ Operating Temperature -40°C to +85°C

■ CMOS Process (P-type silicon substrate)

■ Flexible Blocking Architecture

? Eight 4K-word Parameter Blocks

? Sixty-three 32K-word Main Blocks

? Bottom Parameter Location

■ Enhanced Data Protection Features

? Individual Block Lock and Block Lock-Down with Zero-Latency

? All blocks are locked at power-up or device reset.

? Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions

■ Automated Erase/Program Algorithms

? 3.0V Low-Power 11μs/Word (Typ.)

Programming

? 12V No Glue Logic 9μs/Word (Typ.)

Production Programming and 0.5s Erase (Typ.)

■ Cross-Compatible Command Support

? Basic Command Set

? Common Flash Interface (CFI)

■ Extended Cycling Capability

? Minimum 100,000 Block Erase Cycles

■ 48-Lead TSOP

■ ETOXTM* Flash Technology

■ Not designed or rated as radiation hardened