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MCR703A

SiliconControlledRectifiers

SiliconControlledRectifiersReverseBlockingTriodeThyristors ...PNPNdevicesdesignedforhighvolume,lowcostconsumerapplicationssuchastemperature,lightandspeedcontrol;processandremotecontrol;andwarningsystemswherereliabilityofoperationiscritical. ?SmallSize ?P

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

MCR703A

SiliconPlanarPNPNThyristor(4ASCR)

DESCRIPTION ThyristorinaTO-252Package. FEATURES Theconsumptionlevelprovidereliableapplications, suchastemperature,lighting,speed,etc. APPLICATIONS AppliedtohighVoltagecontrolcircuit.

FS

First Silicon Co., Ltd

MJE703

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBase-EmitterResistors ?HighDCCurrentGain:hFE=750(Min.)@IC=-1.5and-2.0ADC ?ComplementtoMJE800/801/802/803

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

MJE703

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE703

NPN(HIGHDCCURRENTGAIN)

SamsungSamsung semiconductor

三星三星半導體

MJE703

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral?purposeamplifierandlow?speedswitchingapplications. Features ?HighDCCurrentGain?hFE =2000(Typ)@IC =2.0Adc ?MonolithicConstructionwithBuilt?inBase?EmitterResistorsto LimitLeakage?Multiplication ?ChoiceofPackages?M

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE703

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION ?Collector–EmitterSustainingVoltage—:VCEO(SUS)=-80V ?DCCurrentGain—:hFE=750(Min)@IC=-2A =100(Min)@IC=-4A ?ComplementtoTypeMJE803 APPLICATIONS ?Designedforgeneral-purposeamplifierandlow-speedswitchingap

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MJE703

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJE703

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美國中央半導體

MJE703

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. ?HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc ?MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication ?ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

產品屬性

  • 產品編號：

    LCS703HG

  • 制造商：

    Power Integrations

  • 類別：

    集成電路（IC） > 全半橋驅動器

  • 系列：

    HiperLCS?

  • 包裝：

    卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶

  • 輸出配置：

    半橋

  • 應用：

    通用

  • 接口：

    開/關

  • 負載類型：

    電感

  • 技術：

    功率 MOSFET

  • 導通電阻（典型值）：

    600 毫歐

  • 電流 - 峰值輸出：

    12.9A

  • 電壓 - 供電：

    11.4V ~ 15V

  • 電壓 - 負載：

    11.4V ~ 15V

  • 工作溫度：

    -40°C ~ 150°C（TJ）

  • 特性：

    自動重啟，壓擺率受控型

  • 故障保護：

    限流，超溫，過壓，短路，UVLO

  • 安裝類型：

    通孔

  • 封裝/外殼：

    16-SSIP，13 引線，裸露焊盤，成形引線

  • 供應商器件封裝：

    eSIP-16J

  • 描述：

    IC LLC CTRL MFET 275W ESIP16C

供應商型號品牌批號封裝庫存備注價格
POWER
20+
ESIP-16C
9986
詢價
POWER
23+
ESIP-16C
15000
原裝現貨假一賠十
 詢價
Power Integrations(帕沃英蒂格
24+
ESIP-16C
928
深耕行業(yè)12年,可提供技術支持。
 詢價
POWER
24+
ESIP-16C
325
原裝正品/假一罰十/支持樣品/可開發(fā)票
 詢價
Power Integrations
2450+
ESIP-16
6885
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
POWER
2016+
ESIP-16C
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價
POWER
23+
ESIP-16
8650
受權代理!全新原裝現貨特價熱賣!
 詢價
POWER
19+
ESIP-16
16200
原裝正品,現貨特價
 詢價
POWER
20+
ESIP-16C
31000
POWER原裝主營型號-可開原型號增稅票
 詢價
POWER
24+
ESIP-16C
65200
一級代理/放心采購
 詢價
更多LCS703HG供應商 更新時間2025-7-23 15:48:00

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